BSM150GB120DN2

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : 320 nA
Configuration : Half Bridge Module
Continuous Collector Current at 25 C : 210 A
Power Dissipation : 1.25 KW
Package / Case : Half Bridge2


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate




Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage RGE = 20 k	VCGR	1200
Gate-emitter voltage	VGE	± 20
DC collector current TC = 25 °C TC = 80 °C	IC	210 150	A
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C	lCpuls	420 300
Power dissipation per IGBT TC = 25 °C	Ptot	1250	W
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	-55 ... + 150	°C

Description

The BSM150GB120DN2 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 150 A (Tc=80 °C) or 210 A (Tc=25 °C);(3)Power dissipation per IGBT: 1250 W;(4)Chip temperature: + 150 °C;(5)Storage temperature: -55 to +150 °C;(6)Thermal resistance, chip case: </= 0.1 K/W;(7)Diode thermal resistance, chip case: </= 0.25 K/W;(8)insulation test voltage: 2.5 kV. Features of this device are:(1)half-bridge; (2)including fast free-wheeling diodes; (3)package with insulated metal base plate.

The electrical characteristics of the BSM150GB120DN2 can be summarized as:(1)collector-emitter saturation voltage: 2.5 or 3.1 V;(2)Gate-emitter leakage current: 320 nA;(3)Transconductance: 62 S;(4)input capacitance: 11 nF;(5)reverse transfer capacitance: 0.6 nF;(6)Output capacitance: 1.6 nF;(7)Turn-on delay time: 200 to 400 ns;(8)Rise time: 100 to 200 ns;(9)Turn-off delay time: 600 to 800 ns. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .