BSM10GD60DN2

Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltage, RGS = 20 k V...

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SeekIC No. : 004302165 Detail

BSM10GD60DN2: Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values ...

floor Price/Ceiling Price

Part Number:
BSM10GD60DN2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Features:

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate



Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
600
V
Collector-gate voltage, RGS = 20 k
VCGR
600
Gate-source voltage
V GE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
Ic
10
 
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Ic puls
20
 
Power dissipation per IGBT TC = 25 °C
Ptot
35
W
Chip temperature
Tj
+ 125
°C
Storage temperature

Tstg

-55 ... + 150



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