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BSN20W

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Application· Thin and thick film circuits· General purpose fast switching applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage ...

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SeekIC No. : 004302211 Detail

BSN20W: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Application· Thin and thick film circuits· General purpose fast switching applications.Specifications ...

BSN20W Data Sheet

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Part Number:
BSN20W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown.


Application

· Thin and thick film circuits
· General purpose fast switching applications.


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
50
V
±VGSO
gate-source voltage
open drain
±20
V
ID
DC drain current
80
mA
IDM
peak drain current
300
A
Ptot
total power dissipation
up to Tamb = 25 °C; note 1
200
W
Tstg
storage temperature
-65
+150
°C
Tj
operating junction temperature
-65
150
°C

Note:1. Device mounted on an epoxy printed- circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm x 10 mm.




Description

N-channel enhancement mode vertical D-MOS transistor BSN20W in a 3 pin plastic SOT323 SMD package.


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