BSM300GA120DN2

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single
Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : 320 nA
Package / Case : 62MM
Continuous Collector Current at 25 C : 430 A
Power Dissipation : 2500 W


Features:

• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate


Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage RGE = 20 k	VCGR	1200
Gate-emitter voltage	VGE	±20
DC collector current TC = 25 TC = 80	IC	430 300	A
Pulsed collector current, tp =1 ms TC = 25 TC = 80	ICpuls	860 600
Power dissipation per IGBT TC = 25	Ptot	2500	W
Chip temperature	Tj	+150
Storage temperature	Tstg	-55 ... + 150
Thermal resistance, chip case	RthJC	0.05	K/W
Diode thermal resistance, chip case	RthJCD	0.125
Insulation test voltage, t = 1min.	Vis	2500	Vac
Creepage distance	-	20	mm
Clearance	-	11
DIN humidity category, DIN 40 040	-	F	-
IEC climatic category, DIN IEC 68-1	-	55 / 150 / 56