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BSM181

Features: ·Power module·Single switch·N channel·Enhancement mode·Package with insulated metal base plate·Package outline/Circuit diagram: 11)Specifications Parameter Symbol Values Unit Drain-source voltage VDS 800 V Drain-gate voltage, RGS = 20 k VDGR 800 ...

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BSM181: Features: ·Power module·Single switch·N channel·Enhancement mode·Package with insulated metal base plate·Package outline/Circuit diagram: 11)Specifications Parameter Symbol Values Un...

BSM181 Data Sheet

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Part Number:
BSM181
Supply Ability:
5000

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Upload time: 2024/11/23

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Product Details

Description



Features:


·Power module
·Single switch
·N channel
·Enhancement mode
·Package with insulated metal base plate
·Package outline/Circuit diagram: 11)


Specifications

Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
800
V
Drain-gate voltage, RGS = 20 k
VDGR
800
Gate-source voltage
VGS
± 20
Continuous drain current, TC = 25 °C
ID
36
A
Pulsed drain current, TC = 25 °C
ID puls
144
Operating and storage temperature range
Tj, Tstg
55 . + 150
°C
Power dissipation, TC = 25 °C
Ptot
700
W
Thermal resistance
Chip-case
Rth JC
0.18
K/W
Insulation test voltage2), t = 1 min.
Vis
2500
Vac
Creepage distance, drain-source
16
mm
Clearance, drain-source
11
DIN humidity category, DIN 40 040
F
IEC climatic category, DIN IEC 68-1
55/150/56

1) See chapter Package Outline and Circuit Diagrams. 2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.




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