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BSM75GB170DN2

IGBT Modules N-CH 1.7KV 110A

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SeekIC No. : 00141459 Detail

BSM75GB170DN2: IGBT Modules N-CH 1.7KV 110A

BSM75GB170DN2 Data Sheet

floor Price/Ceiling Price

US $ 60.03~66.66 / Piece | Get Latest Price
Part Number:
BSM75GB170DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~5
  • 5~10
  • Unit Price
  • $66.66
  • $63.34
  • $60.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Dual
Collector- Emitter Voltage VCEO Max : 1700 V Continuous Collector Current at 25 C : 110 A
Maximum Operating Temperature : + 150 C Package / Case : 34MM    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : 34MM
Collector- Emitter Voltage VCEO Max : 1700 V
Continuous Collector Current at 25 C : 110 A


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• RG on,min = 22 Ohm


Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1700
V
Collector-gate voltage
RGE = 20 k
VCGR
1700
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
110
75
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
220
150
Power dissipation per IGBT
TC = 25 °C
Ptot
625
W
Chip temperature
Tj
+ 150
°C
Storage temperature
Tstg
-40 ... + 125



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