BSM75GB170DN2, US $ 60.03-66.66 , Infineon Technologies, BSM75GB170DN2 DataSheet download, circuit diagram from SeekIC.com

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BSM75GB170DN2: IGBT Modules N-CH 1.7KV 110A

BSM75GB170DN2 Data Sheet

US $ 60.03~66.66 / Piece | Get Latest Price

Part Number:: BSM75GB170DN2
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$66.66
$63.34
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IGBT Modules 1200V 75A DUAL

Product Details

Quick Details

Product :	IGBT Silicon Modules	Configuration :	Dual
Collector- Emitter Voltage VCEO Max :	1700 V	Continuous Collector Current at 25 C :	110 A
Maximum Operating Temperature :	+ 150 C	Package / Case :	34MM

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : 34MM
Collector- Emitter Voltage VCEO Max : 1700 V
Continuous Collector Current at 25 C : 110 A

Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R_{G on,min} = 22 Ohm

Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1700	V
Collector-gate voltage R_GE = 20 k	V_CGR	1700
Gate-emitter voltage	V_GE	± 20
DC collector current T_C = 25 °C T_C = 80 °C	I_C	110 75	A
Pulsed collector current, t_p = 1 ms T_C = 25 °C T_C = 80 °C	I_Cpuls	220 150	A
Power dissipation per IGBT T_C = 25 °C	P_tot	625	W
Chip temperature	T_j	+ 150	°C
Storage temperature	T_stg	-40 ... + 125	°C

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BSM75GB170DN2

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