BSM50GD120DN2

Packaging :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 350 W
Package / Case : EconoPACK 2A
Gate-Emitter Leakage Current : 200 nA
Continuous Collector Current at 25 C : 72 A


Features:

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate


Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage, RGS = 20 k	VCGR	1200
Gate-source voltage	V GE	± 20
DC collector current TC = 25 °C TC = 80 °C	Ic	72 50	A
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C	Ic puls	144 100
Power dissipation,per IGBT TC = 25 °C	Ptot	350	W
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	-55 ... + 150