BSM25GB120DN2

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 200 W
Configuration : Half Bridge Module
Package / Case : Half Bridge1
Gate-Emitter Leakage Current : 180 nA
Continuous Collector Current at 25 C : 38 A


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate


Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage RGE = 20 k	VCGR	1200
Gate-emitter voltage	VGE	± 20
DC collector current TC = 25 °C TC = 80 °C	IC	38 25	A
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C	lCpuls	76 50
Power dissipation per IGBT TC = 25 °C	Ptot	200	W
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	-55 ... + 150	°C