BSM400GA120DN2, US $ 102.74-114.15 , Infineon Technologies, BSM400GA120DN2 DataSheet download, circuit diagram from SeekIC.com

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BSM400GA120DN2: IGBT Modules 1200V 400A SINGLE

BSM400GA120DN2 Data Sheet

US $ 102.74~114.15 / Piece | Get Latest Price

Part Number:: BSM400GA120DN2
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$114.15
$102.74

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Upload time: 2024/11/13

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US $96.24 - 106.93 / Piece

IGBT Modules 1200V 400A SINGLE

Product Details

Quick Details

Product :	IGBT Silicon Modules	Configuration :	Single
Collector- Emitter Voltage VCEO Max :	1200 V	Continuous Collector Current at 25 C :	550 A
Power Dissipation :	2700 W	Maximum Operating Temperature :	+ 150 C
Package / Case :	62MM

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single
Package / Case : 62MM
Power Dissipation : 2700 W
Continuous Collector Current at 25 C : 550 A

Features:

• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate

Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1200	V
Collector-gate voltage R_GE = 20 k	V_CGR	1200
Gate-emitter voltage	V_GE	±20
DC collector current T_C = 25 T_C = 80	I_C	550 400	A
Pulsed collector current, tp =1 ms T_C = 25 T_C = 80	I_Cpuls	1100 800	A
Power dissipation per IGBT T_C = 25	P_tot	2700	W
Chip temperature	T_j	+150
Storage temperature	T_stg	-55 ... + 150
Thermal resistance, chip case	R_thJC	0.045	K/W
Diode thermal resistance, chip case	R_thJCD	0.09	K/W
Insulation test voltage, t = 1min.	V_is	2500	Vac
Creepage distance	-	20	mm
Clearance	-	11	mm
DIN humidity category, DIN 40 040	-	F	-
IEC climatic category, DIN IEC 68-1	-	55 / 150 / 56	-

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BSM400GA120DN2

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