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BSM400GA120DN2

IGBT Modules 1200V 400A SINGLE

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SeekIC No. : 00141923 Detail

BSM400GA120DN2: IGBT Modules 1200V 400A SINGLE

BSM400GA120DN2 Data Sheet

floor Price/Ceiling Price

US $ 102.74~114.15 / Piece | Get Latest Price
Part Number:
BSM400GA120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~6
  • 6~10
  • Unit Price
  • $114.15
  • $102.74
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V Continuous Collector Current at 25 C : 550 A
Power Dissipation : 2700 W Maximum Operating Temperature : + 150 C
Package / Case : 62MM    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single
Package / Case : 62MM
Power Dissipation : 2700 W
Continuous Collector Current at 25 C : 550 A


Features:

• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate


Specifications

Parameter Symbol
Values
 Unit
Collector-emitter voltage VCE
1200
 V
Collector-gate voltage
RGE = 20 k		 VCGR
1200
Gate-emitter voltage VGE
±20
DC collector current
TC = 25
TC = 80
 IC
550
400
 A
Pulsed collector current, tp =1 ms
TC = 25
TC = 80
 ICpuls
1100
800
Power dissipation per IGBT
TC = 25		 Ptot
2700
 W
Chip temperature Tj
+150
Storage temperature Tstg
-55 ... + 150
Thermal resistance, chip case RthJC
0.045
 K/W
Diode thermal resistance, chip case RthJCD
0.09
Insulation test voltage, t = 1min. Vis
2500
 Vac
Creepage distance -
20
 mm
Clearance -
11
DIN humidity category, DIN 40 040 -
F
 -
IEC climatic category, DIN IEC 68-1 -
55 / 150 / 56



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