BSM35GB120DN2

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Power Dissipation : 280 W
Configuration : Half Bridge Module
Package / Case : Half Bridge1
Continuous Collector Current at 25 C : 50 A
Gate-Emitter Leakage Current : 150 nA
Collector-Emitter Saturation Voltage : 3.2 V


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Doubled diode area
• Package with insulated metal base plate


Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage, RGS = 20 k	VCGR	1200
Gate-source voltage	V GE	± 20
DC collector current TC = 25 °C TC = 80 °C	Ic	50 35	A
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C	Ic puls	100 70
Power dissipation,per IGBT  TC = 25 °C	Ptot	280	W
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	-55 ... + 150