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Index M : M5M465805BJ,M5M465800DJ,M58BW032DB,
M5M465805BJ
Vendor:Other Category:Other
The M5M467405/465405BJ,BTP is organized 16777216-word by 4-bit, M5M467805/465805BJ,BTP is organized 8388608-word by 8-bit, and M5M465165BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high pe...M5M465800DJ
Vendor:Other Category:Other
The M5M467400/465400DJ,DTP is a 16777216-word by 4-bit, M5M467800/465800DJ,DTP is a 8388608-word by 8-bit, and M5M465160DJ,DTP is a 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, ...M5M465405BJ
Mfg:MIT Pack:SOJ D/C:09+ Vendor:Other Category:Other
The M5M467405/465405BJ,BTP is organized 16777216-word by 4-bit, M5M467805/465805BJ,BTP is organized 8388608-word by 8-bit, and M5M465165BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high pe...M5M465400DJ
Vendor:Other Category:Other
The M5M467400/465400DJ,DTP is a 16777216-word by 4-bit, M5M467800/465800DJ,DTP is a 8388608-word by 8-bit, and M5M465160DJ,DTP is a 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, ...M5M465400BJ
Vendor:Other Category:Other
The M5M467400/465400BJ,BTP is organized 16777216-word by 4-bit, M5M467800/465800BJ,BTP is organized 8388608-word by 8-bit, and M5M465160BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high e...M5M465165BJ
Pack:SOJ Vendor:Other Category:Other
The M5M467405/465405BJ,BTP is organized 16777216-word by 4-bit, M5M467805/465805BJ,BTP is organized 8388608-word by 8-bit, and M5M465165BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high pe...M5M465160DJ
Vendor:Other Category:Other
The M5M467400/465400DJ,DTP is a 16777216-word by 4-bit, M5M467800/465800DJ,DTP is a 8388608-word by 8-bit, and M5M465160DJ,DTP is a 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, ...M5M44800CTP
Mfg:MIT D/C:2005+ Vendor:Other Category:Other
M5M44800CTP is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are es...M5M44800CJ
Mfg:4 Pack:MIT Vendor:Other Category:Other
M5M44800CJ is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are ess...M5M44405CJ
Vendor:Other Category:Other
M5M44405CJ is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation,and low costs are esse...M5M44265CJ
Mfg:MITSUBISHI Pack:SOJ-40 D/C:03+ Vendor:Other Category:Other
ThisM5M44265CJ is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics ...M5M44260CTP
Pack:TSOP Vendor:Other Category:Other
This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.The use of do...M5M44260CJ
Mfg:MITSUB D/C:SOJ Vendor:Other Category:Other
This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.The use of do...M5M417400CTP
Pack:TSOP Vendor:Other Category:Other
This is a family of 4194304-word by 4-bit dynamic RAMS,fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essentia...M5M417400CJ
Mfg:MIT D/C:09+ Vendor:Other Category:Other
This is a family of 4194304-word by 4-bit dynamic RAMS,fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essentia...M5M29T800FP
Vendor:Other Category:Other
The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricate...M5M29T161BWG
Vendor:Other Category:Other
The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Era...M5M29T160BVP-80
Vendor:Other Category:Other
The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Era...M5M29KE131BVP
Mfg:TSSOP48 Pack:87 D/C:MIT Vendor:Other Category:Other
The M5M29KE131BVP is a Stacked micro Multi Chip Package that contents 2 Dies of 64M-bit Flash memory in a 48-pin TSOP(I) for lead free use.128M-bit Flash memory is a 16,777,216 bytes / 8,388,608 words, single power suppl...M5M29KE131BTP
Vendor:Other Category:Other
The M5M29KE131BTP is a Stacked micro Multi Chip Package that contents 2 Dies of 64M-bit Flash memory in a 52-pin TSOP(II) for lead free use. 128M-bit Flash memory is a 16,777,216 bytes / 8,388,608 words, single power sup...M5M29KB
Vendor:Other Category:Other
The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be perfo...M5M29GB640VP
Mfg:MITSUBISHI Pack:TSOP48 D/C:2005+ Vendor:Other Category:Other
M5M29GB
Mfg:MITSUBISHI Pack:n/a D/C:03+ Vendor:Other Category:Other
The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Era...M5M29FB
Vendor:Other Category:Other
The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricate...M5M29F25611VP
Mfg:MITSUBISHI Vendor:Other Category:Other
The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells. M5M29F25611 has fully automatic programming and erase capabilities with a single 3.3V power supply.The M5M29F25611 functions are c...M5M28F101AFP
Mfg:MITSVBISHI Pack:N/A D/C:N/A Vendor:Other Category:Other
The MITSUBISHI M5M28F101A is high-speed 1048576-bit CMOS Flash Memories. This is suitable for the applications with microprocessor or micro-controller where on-board reprogramming is required. The M5M28F101A is fabricate...M5L8279P-5
Vendor:Other Category:Other
The M5L8279P-5 is a programmable keyboard and display interface device that is designed to be used in combination with an 8-bit/16-bit microprocessor. The maximum ratings of the M5L8279P-5 can be summarized as:(1):the s...M5L8251AP-5
Vendor:Other Category:Other
The M5L8251AP-5 is a universal synchronous/asynchronous receiver/transmitter (USART) IC chip designed for data communication use. It is produced using the N-channel silicon-gate ED-MOS process and is mainly used in combi...M5L8216P
Vendor:Other Category:Other
The M5L8216P is a kind of 4-bit bidirectional bus driver and suitable for the 8-bit parallel CPU M5L8085AP. It is widely used as the bidirectional bus driver/receiver for various types of microcomputer systems. There ar...M5L2764K-2
Vendor:Other Category:Other
The mitsubishi M5L2764K-2 is a high-speed 65536-bit ultraiolet erasabe and electrically reprogrammable read only memory.The M5L2764K-2 is fabriceted by N-channel double poly-silicon gate technology and is avaiable in a 2...M5L
Vendor:Other Category:Other
M5L Series 3.2x 5 mm, HCMOS, 5 V Clock Oscillators - Ultra miniature size. Ideal for PCMCIA cards, laptop/palmtop computers, wireless handsets, portable instrumentation.M59PW1282
Mfg:STM Pack:SOP-44 D/C:04+ Vendor:Other Category:Other
The M59PW1282 is a 128Mbit (8Mb x16), Mask-ROM pinout compatible, non-volatile LightFlash™ memory, that can be read, erased and reprogrammed.Read operations can be performed using a single low voltage (2.7 to 3.6V)...M59PW064
Mfg:STM Pack:SOP-44 D/C:04+ Vendor:Other Category:Other
The M59PW064 is a 64Mbit (4Mbx16), Mask-ROM pin-out compatible, non-volatile LightFlash memory, that can be read, erased and reprogrammed. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply....M59MR032D
Vendor:Other Category:Other
The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Eras...M59MR032C
Mfg:11000 Pack:ST Vendor:Other Category:Other
The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Eras...M59DR032EB
Vendor:Other Category:Other
The M59DR032E is a 32 Mbit (2Mbit x16) non-vol- atile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a ...M59DR032EA
Vendor:Other Category:Other
The M59DR032E is a 32 Mbit (2Mbit x16) non-vol- atile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a ...M59DR032B
Vendor:Other Category:Other
The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Eras...M59DR032A
Mfg:ST D/C:BGA Vendor:Other Category:Other
The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Eras...M59DR016D
Vendor:Other Category:Other
The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Eras...M59DR016C
Mfg:ST D/C:BGA Vendor:Other Category:Other
The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Eras...M59DR008F
Mfg:MIT D/C:3200 Vendor:Other Category:Other
The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Eras...M59DR008E
Mfg:ST Pack:BGA D/C:02+ Vendor:Other Category:Other
The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Eras...M59BW102
Vendor:Other Category:Other
The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply. For Program and Erase operations the necessary h...M59330P
Vendor:Other Category:Other
The M59330P is an integrated circuit for two-line LAN transceivers, conforming to J1850 specifications.The chip M59330P incorporates bus line anomaly detection functions; anomalous behavior causes the ERR signal to go to...M5913
Vendor:Other Category:Other
The M5913 is fully integrated PCM (pulse code modulation) codecs and transmit/receive filter using CMOS silicon gate technology.The primary applications for the M5913 are telephone systems : `Switching - M5913-Digit...M58WT032KT
Vendor:Other Category:Other
The M58WT032KT/B and M58WT064KT/B are 32 Mbit (2 Mbit *16) and 64 Mbit (4 Mbit *16) non-volatile Flash memories, respectively. They can be erased electrically at block level and programmed in-system on a word-by-word bas...M58WR128ET
Vendor:Other Category:Other
The M58WR128E is a 128 Mbit (8Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1....M58WR128EB
Vendor:Other Category:Other
The M58WR128E is a 128 Mbit (8Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1....M58WR064ET
Vendor:Other Category:Other
The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1....M58WR064EB
Mfg:ST Pack:BGA Vendor:Other Category:Other
The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1....M58WR032FT
Vendor:Other Category:Other
M58WR032FB
Vendor:Other Category:Other
M58WR016QB
Vendor:Other Category:Other
The M58WR016QT/B and M58WR032QT/B are 16 Mbit (1 Mbit x16) and 32 Mbit (2 Mbit x16) non-volatile Flash memories, respectively. They will be referred to as M58WRxxxQT/B throughout the document unless otherwise specified.T...M58WR016KU
Vendor:Other Category:Other
The M58WR016KU/L and M58WR032KU/L are 16-Mbit (1 Mbit *16) and 32- Mbit (2 Mbit *16) non-volatile Flash memories, respectively. In the rest of the document, they will be referred to as M58WRxxxKU/L unless otherwise speci...M58PR512LE
Vendor:Other Category:Other
The M58PR512LE and M58PR001LE are 512 Mbit (32 Mbit x 16) and 1 Gbit (64 Mbit x 16) non-volatile flash memories. They are collectively referred to as the M58PRxxxLE in the rest of the document, unless otherwise specified...M58PR256LE
Vendor:Other Category:Other
The M58PR256LE, M58PR512LE and M58PR001LE are 256 Mbit (16 Mbit x 16), 512 Mbit (32 Mbit x 16) and 1 Gbit (64 Mbit x 16) non-volatile Flash memories. They are referred to as M58PRxxxLE in the rest of the document, unless...M58PR001LE
Vendor:Other Category:Other
The M58PR512LE and M58PR001LE are 512 Mbit (32 Mbit x 16) and 1 Gbit (64 Mbit x 16) non-volatile flash memories. They are collectively referred to as the M58PRxxxLE in the rest of the document, unless otherwise specified...M58MR064D
Vendor:Other Category:Other
The M58MR064 is a 64 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Era...M58MR064C
Vendor:Other Category:Other
The M58MR064 is a 64 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Era...M58MR032D
Vendor:Other Category:Other
The M58MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Eras...M58MR032C
Mfg:ST Pack:BGA Vendor:Other Category:Other
The M58MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Eras...M58MR016D
Vendor:Other Category:Other
The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Eras...M58MR016C
Vendor:Other Category:Other
The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Eras...M58LW64D
Vendor:Other Category:Other
The M58LW64D is a 64 Mbit (8Mb x 8 or 4Mbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V)core supply.M58LW64D has many unique...M58LW128B
Mfg:11000 Pack:ST Vendor:Other Category:Other
M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory d...M58LW128A
Mfg:6000 Pack:ST D/C:01+ Vendor:Other Category:Other
M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory d...M58LW064D110N1F
Vendor:Other Category:Other
The M58LW064D110N1F is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.The memory is d...M58LW064D
Mfg:ST Pack:TSOP Vendor:Other Category:Other
The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.The memory of M58LW06...M58LW064C
Mfg:ST Pack:BGA Vendor:Other Category:Other
M58LW064C is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to ...M58LW064BNF
Vendor:Other Category:Other
The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to...M58LW064B
Vendor:Other Category:Other
The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 m Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down ...M58LW064A
Vendor:Other Category:Other
The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 m Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down ...M58LW032D110N6F
Vendor:Other Category:Other
The M58LW032D110N6F is a 32 Mbit (4Mb x 8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.The memory is d...M58LW032D
Vendor:Other Category:Other
Stressing the device above the ratings listed in Table 11, Absolute Maximum Ratings, may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions ab...M58LW032C110N6F
Vendor:Other Category:Other
The M58LW032C110N6F is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed.These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.On power-up the memory defa...M58LW032C
Mfg:ST Pack:BGA D/C:233 Vendor:Other Category:Other
M58LW032C Stressing the device above the ratings listed in Table 1, Absolute Maximum Ratings, may cause ermanent damage to the device. These are tress ratings only and operation of the device at hese or any other conditi...M58LW032A
Vendor:Other Category:Other
The M58LW032 is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults ...M58LV064B
Vendor:Other Category:Other
M58LV064 is a 64Mbit (4Mb x16 or 2Mb x32) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defa...M58LV064A
Vendor:Other Category:Other
M58LV064 is a 64Mbit (4Mb x16 or 2Mb x32) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defa...M58LT128GST
Vendor:Other Category:Other
The M58LT128GST and M58LT128GSB are 128 Mbit (8 Mbit x16) non-volatile Secure Flash memories.The devices M58LT128GST and M58LT128GSB may be erased electrically at block level and programmed in-system on a Word-by- Word b...M58LT128GSB
Vendor:Other Category:Other
The M58LT128GST and M58LT128GSB are 128 Mbit (8 Mbit x16) non-volatile Secure Flash memories.The devices M58LT128GST and M58LT128GSB may be erased electrically at block level and programmed in-system on a Word-by- Word b...M58LR256KT
Vendor:Other Category:Other
The M58LR128KT/B and M58LR256KT/B are 128 Mbit (8 Mbit *16) and 256 Mbit (16 Mbit *16) non-volatile Flash memories, respectively. They can be erased electrically at block level and programmed in-system on a word-by-word ...M58LR256KD
Vendor:Other Category:Other
The M58LR128KC/D and M58LR256KC/D are 128 Mbit (8 Mbit *16) and 256 Mbit (16 Mbit *16) non-volatile Flash memories, respectively. They may be erased electrically at block level and programmed in-system on a word-by-word ...M58LR256KC
Vendor:Other Category:Other
The M58LR128KC/D and M58LR256KC/D are 128 Mbit (8 Mbit *16) and 256 Mbit (16 Mbit *16) non-volatile Flash memories, respectively. They may be erased electrically at block level and programmed in-system on a word-by-word ...M58LR256KB
Vendor:Other Category:Other
The M58LR128KT/B and M58LR256KT/B are 128 Mbit (8 Mbit *16) and 256 Mbit (16 Mbit *16) non-volatile Flash memories, respectively. They can be erased electrically at block level and programmed in-system on a word-by-word ...M58LR128KT
Vendor:Other Category:Other
The M58LR128KT/B and M58LR256KT/B are 128 Mbit (8 Mbit *16) and 256 Mbit (16 Mbit *16) non-volatile Flash memories, respectively. They can be erased electrically at block level and programmed in-system on a word-by-word ...M58LR128KD
Vendor:Other Category:Other
The M58LR128KC/D and M58LR256KC/D are 128 Mbit (8 Mbit *16) and 256 Mbit (16 Mbit *16) non-volatile Flash memories, respectively. They may be erased electrically at block level and programmed in-system on a word-by-word ...M58LR128KC
Vendor:Other Category:Other
The M58LR128KC/D and M58LR256KC/D are 128 Mbit (8 Mbit *16) and 256 Mbit (16 Mbit *16) non-volatile Flash memories, respectively. They may be erased electrically at block level and programmed in-system on a word-by-word ...M58LR128KB
Vendor:Other Category:Other
The M58LR128KT/B and M58LR256KT/B are 128 Mbit (8 Mbit *16) and 256 Mbit (16 Mbit *16) non-volatile Flash memories, respectively. They can be erased electrically at block level and programmed in-system on a word-by-word ...M58LR128FT
Vendor:Other Category:Other
The M58LR128FT/B is a 128 Mbit (8Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2.0V VDD supply for the circuitry and a...M58LR128FB
Vendor:Other Category:Other
The M58LR128FT/B is a 128 Mbit (8Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2.0V VDD supply for the circuitry and a...M58CR064Q
Vendor:Other Category:Other
The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V...M58CR064P
Mfg:ST Pack:BGA Vendor:Other Category:Other
The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V...M58CR064D
Vendor:Other Category:Other
The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V...M58CR064C
Vendor:Other Category:Other
The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V...M58CR032D
Vendor:Other Category:Other
M58CR032C
Vendor:Other Category:Other
M58BW032DT
Vendor:Other Category:Other
The M58BW032B/D is a 32Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double-Word basis using a 3.0V to 3.6V VDD supply for the circuit and a VDDQ supply d...M58BW032DB
Vendor:Other Category:Other
The M58BW032B/D is a 32Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double-Word basis using a 3.0V to 3.6V VDD supply for the circuit and a VDDQ supply d...