M58WR032FB

SUPPLY VOLTAGE VDD = 1.7V to 2V for Program, Erase andRead VDDQ = 1.7V to 2.24V for I/O Buffers VPP = 12V for fast Program (optional)
SYNCHRONOUS / ASYNCHRONOUS READ Synchronous Burst Read mode: 66MHz Asynchronous/ Synchronous Page Readmode Random Access: 60ns, 70ns, 80ns
 SYNCHRONOUS BURST READ SUSPEND
 PROGRAMMING TIME 8s by Word typical for Fast FactoryProgram Double/Quadruple Word Program option Enhanced Factory Program options
 MEMORY BLOCKS Multiple Bank Memory Array: 4 MbitBanks Parameter Blocks (Top or Bottomlocation)
 DUAL OPERATIONS Program Erase in one Bank while Read inothers No delay between Read and Writeoperations
 BLOCK LOCKING All blocks locked at Power up Any combination of blocks can be locked WP for Block Lock-Down
 SECURITY 128 bit user programmable OTP cells 64 bit unique device number
 COMMON FLASH INTERFACE (CFI)
 100,000 PROGRAM/ERASE CYCLES perBLOCK 
ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Codes:M58WR032FT (Top): 8814hM58WR032FB (Bottom): 8815h
 PACKAGE Compliant with Lead-Free SolderingProcesses Lead-Free Versions