M59DR008E

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute  Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

2. Depends on range.

3. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.

The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.The device supports asynchronous page
mode from all the blocks of the memory array.

The M59DR008 array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power Up. Blocks can be unprotected to make changes in the application and then reprotected.

Instructions for Read/Reset, Auto Select, Write Configuration Register, Programming, Block Erase, Bank Erase, Erase Suspend, Erase Resume,Block Protect, Block Unprotect, Block Locking,CFI Query, are written to the memory through a Command Interface using standard microprocessor write timings.

The M59DR008 device is offered in TSOP48 (12 x 20 mm) and in FBGA48 0.75 mm ball pitch packages.When shipped all bits of the M59DR008 device are at the logical level '1'.