M58LT128GSB

The M58LT128GST and M58LT128GSB are 128 Mbit (8 Mbit x16) non-volatile Secure Flash memories.

The devices M58LT128GST and M58LT128GSB may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.7 to 2.0V V_DD supply for the circuitry and a 2.7 to 3.6V VDDQ supply for the Input/Output pins. An optional 9V VPP power supply is provided to speed up factory programming.

The devices M58LT128GST and M58LT128GSB feature an asymmetrical block architecture and are based on a multi-level cell technology. The memory array is organized as 131 blocks, and is divided into 8 Mbit banks.

There are 15 banks each containing 8 main blocks of 64 KWords, and one parameter bank containing 4 parameter blocks of 16 KWords and 7 main blocks of 64 KWords.

The M58LT128GST and M58LT128GSB Multiple Bank Architecture allows Dual Operations, while programming or erasing in one bank, read operations are possible in other banks. Only one bank at a time is allowed to be in program or erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architecture is summarized in Table 2, and the memory maps are shown in Figure 3. The Parameter Blocks are located at the top of the memory address space for the M58LT128GST, and at the bottom for the M58LT128GSB.

Each block M58LT128GST and M58LT128GSB can be erased separately. Erase can be suspended, in order to perform a program or read operation in any other block, and then resumed. Program can be suspended to read data at any memory location except for the one being programmed, and then resumed. Each block can be programmed and erased over 100,000 cycles using the supply voltage V_DD. There is a Buffer Enhanced Factory programming command available to speed up programming.

M58LT128GST and M58LT128GSB Program and erase commands are written to the Command Interface of the memory. An internal Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards.

The device M58LT128GST and M58LT128GSB supports Synchronous Burst Read and Asynchronous Read and Page Read from all blocks of the memory array; at power-up the device is configured for Asynchronous Read. In Synchronous Burst Read mode, data is output on each clock cycle at frequencies of up to 52MHz. The Synchronous Burst Read operation can be suspended and resumed.

The device M58LT128GST and M58LT128GSB features an Automatic Standby mode. When the bus is inactive during Asynchronous Read operations, the device automatically switches to the Automatic Standby mode. In this condition the power consumption is reduced to the standby value and the outputs are still driven.

The M58LT128GST and M58LT128GSB are equipped with several features to increase data protection:
Hardware Protection: all blocks are protected from program and erase operations when the VPP VPPLK .
A full set of Software Security Features described in a dedicated Application Note. Please contact     STMicroelectronics for further details.
64-bit Unique Device Identifier
2112 bits of User-Programmable OTP memory

The device M58LT128GST and M58LT128GSB includes 17 Protection Registers and 2 Protection Register locks, one for the first Protection Register and the other for the 16 One-Time-Programmable (OTP) Protection Registers of 128 bits each. The first Protection Register is divided into two segments: a 64 bit segment containing a unique device number written by ST, and a 64 bit segment One-Time- Programmable (OTP) by the user. The user programmable segment can be permanently protected. Figure 4 shows the Protection Register Memory Map.

The devices M58LT128GST and M58LT128GSB are offered in TBGA64 10 x 13mm, 1mm pitch.

In order to meet environmental requirements, ST offers the M58LT128GST and M58LT128GSB in ECOPACK^® package. ECOPACK package is Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

The M58LT128GST and M58LT128GSB memories are supplied with all the bits erased (set to '1').