M5M29T161BWG

 `Organization ....................................1048,576 word x 16bit
                                                               (M5M29GB/T161BWG)
 `Supply voltage............................................ V_CC = 2.7~3.6V
 `Access time .......................................................90ns (Max.)
 `Power Dissipation
               Read ......................................54 mW (Max. at 5MHz)
               (After Automatic Power saving)........... 0.33W (typ.)
               Program/Erase ..................................126 mW (Max.)
               Standby ..............................................0.33W (typ.)
               Deep power down mode.................... 0.33W (typ.)
 `Auto program for Bank(I)
        Program Time........................................... .......4ms (typ.)
        Program Unit
                       (Byte Program) ......................................1word
                       (Page Program) .................................128word
 `Auto program for Bank(II)
       Program Time.................................................. 4ms (typ.)
       Program Unit ....................................................128word
 `Auto Erase
             Erase time.............................................. 40 ms (typ.)
             Erase Unit
                  Bank(I) Boot Block ............................16Kword x 1
                  Parameter Block ...............................16Kword x 7
                  Bank(II) Main Block ..........................32Kword x 28
 `Program/Erase cycles ........................................100Kcycles
 `Boot Block
                 M5M29GB161BWG............................. Bottom Boot
                 M5M29GT161BWG................................... Top Boot
 `Other Functions
                Soft Ware Command Control
                Selective Block Lock
                Erase Suspend/Resume
                Program Suspend/Resume
                Status Register Read
                Alternating Back Ground Program/Erase Operation
                   Between Bank(I) and Bank(II)
 `Package
              7mm x 8.5mm CSP (Chip Scale Package)
             - 6 x 8 balls, 0.75mm ball pitch

The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T161BWG are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6x8-balls CSP (0.75mm ball pitch) .