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M5M465405BJ

Features: `Standard 32 pin SOJ, 32 pin TSOP (M5M467405Bxx/M5M465405Bxx/M5M467805Bxx/M5M465805Bxx) Standard 50 pin SOJ, 50 pin TSOP (M5M465165Bxx)`Single 3.3 ± 0.3V supply`Low stand-by power dissipation 1.8mW (Max)............................... LVCMOS input level`Low operating power dissipationM5M...

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M5M465405BJ: Features: `Standard 32 pin SOJ, 32 pin TSOP (M5M467405Bxx/M5M465405Bxx/M5M467805Bxx/M5M465805Bxx) Standard 50 pin SOJ, 50 pin TSOP (M5M465165Bxx)`Single 3.3 ± 0.3V supply`Low stand-by power dissipat...

M5M465405BJ Data Sheet

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Part Number:
M5M465405BJ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

 `Standard 32 pin SOJ, 32 pin TSOP      (M5M467405Bxx/M5M465405Bxx/M5M467805Bxx/M5M465805Bxx)
    Standard 50 pin SOJ, 50 pin TSOP      (M5M465165Bxx)
 `Single 3.3  ± 0.3V supply
 `Low stand-by power dissipation
           1.8mW (Max)............................... LVCMOS input level
 `Low operating power dissipation
            M5M467405Bxx-5,5S / M5M467805Bxx-5,5S .......360.0mW (Max)
            M5M467405Bxx-6,6S / M5M467805Bxx-6,6S .......324.0mW (Max)
            M5M465405Bxx-5,5S / M5M465805Bxx-5,5S....... 468.0mW (Max)
            M5M465405Bxx-6,6S / M5M465805Bxx-6,6S .......432.0mW (Max)
            M5M465165Bxx-5,5S 504.0mW (Max)
            M5M465165Bxx-6,6S 468.0mW (Max)
 `Self refresh capability*
            Self refresh current ....................................................400A (Max)
 `EDO mode , Read-modify-write, CAS before RAS refresh, Hidden refresh capabilities
 `Early-write mode , OE and W to control output buffer impedance
 `All inputs, outputs LVTTL compatible and low capacitance
   :Applicable to self refresh version(M5M467405/465405/467805/465805/465165BJ,BTP-5S,-6S:option) only


Application

Main memory unit for computers, Microcomputer memory, Refresh memory for CRT


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Rating
Unit
Vcc Supply voltage
 With respect to Vss
-0.5to+4.6
V
VI Input voltage
-0.5to+4.6
V
Vo Output voltage
-0.5to+4.6
V
Io Output current  
50
mA
Pd Power dissipation Ta=25
1000
mW
Topr Operating temperature  
0to70
Tstg Storage temperature  
-65 to +150



Description

The M5M467405/465405BJ,BTP is organized 16777216-word by 4-bit, M5M467805/465805BJ,BTP is organized 8388608-word by 8-bit, and M5M465165BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are suitable for large-capacity memory systems with high speed and low power dissipation.

The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.




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