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M5M417400CJ

Features: • Standard 26 pin SOJ, 26 pin TSOP• Single 5V ± 10% supply• Low stand-by power dissipation 5.5mW(Max) ..................................CMOS Input level 2.2mW (Max)* ...............................CMOS Input level• Low operating power dissipation M5M417400Cxx-5,-5...

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SeekIC No. : 004406184 Detail

M5M417400CJ: Features: • Standard 26 pin SOJ, 26 pin TSOP• Single 5V ± 10% supply• Low stand-by power dissipation 5.5mW(Max) ..................................CMOS Input level 2.2mW (Max)* .......

M5M417400CJ Data Sheet

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Part Number:
M5M417400CJ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Standard 26 pin SOJ, 26 pin TSOP
• Single 5V ± 10% supply
• Low stand-by power dissipation
   5.5mW(Max) ..................................CMOS Input level
   2.2mW (Max)* ...............................CMOS Input level
• Low operating power dissipation
    M5M417400Cxx-5,-5S .................... 800.0mW (Max)
    M5M417400Cxx-6,-6S .................... 660.0mW (Max)
    M5M417400Cxx-7,-7S .................... 580.0mW (Max)
• Self refresh capability *
    self refresh current ................................ 200.0 m A(Max)
• Fast-page mode, Read-modify-write, RAS-only refresh
• CAS before RAS refresh, Hidden refresh capabilities Early-write mode andOEto control output buffer impedance
• All inputs, output TTL compatible and low capacitance
• 2048 refresh cycles every 32ms (A0 ~ A10)
*Applicable to self refresh version (M5M417400CJ,TP-5S,-6S,-7S :option) only


Application

Main memory unit for computers, Microcomputer memory, Refresh memory for CRT


Specifications

Symbol
Parameter
Conditions
Rating
Unit
Vcc Supply voltage
 With respect to Vss
-1to+7
V
VI Input voltage
-1to+7
V
Vo Output voltage
-1to+7
V
Io Output current  
50
mA
Pd Power dissipation Ta=25
1000
mW
Topr Operating temperature  
0to70
Tstg Storage temperature  
-65 to +150



Description

This is a family of 4194304-word by 4-bit dynamic RAMS,fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs.

Multiplexed address inputs permit both a reduction in pins and an increase in system densities.




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