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M5M44260CJ

Features: `Standard 40pin SOJ, 44 pin TSOP (II) Single 5V±10% supply`Low stand-by power dissipation CMOS Input level 5.5mW (Max) CMOS Input level 550W (Max) *`Operating power dissipation M5M44260Cxx-5,-5S ....................688mW (Max) M5M44260Cxx-6,-6S ....................605mW (Max) M5M44260Cxx...

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SeekIC No. : 004406186 Detail

M5M44260CJ: Features: `Standard 40pin SOJ, 44 pin TSOP (II) Single 5V±10% supply`Low stand-by power dissipation CMOS Input level 5.5mW (Max) CMOS Input level 550W (Max) *`Operating power dissipation M5M44260Cxx...

M5M44260CJ Data Sheet

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Part Number:
M5M44260CJ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

 `Standard 40pin SOJ, 44 pin TSOP (II)
    Single 5V±10% supply
 `Low stand-by power dissipation
    CMOS Input level 5.5mW (Max)
    CMOS Input level 550W (Max) *
 `Operating power dissipation
    M5M44260Cxx-5,-5S ....................688mW (Max)
    M5M44260Cxx-6,-6S ....................605mW (Max)
    M5M44260Cxx-7,-7S ....................523mW (Max)
 `Self refresh capability *
    Self refresh current ........................150A (Max)
 `Extended refresh capability
    Extended refresh current............... 150A (Max)
 `Fast-page mode (512-column random access), Read-modify-write, RAS-only refresh, CASbefore RAS refresh, Hidden refresh capabilities.
 `Early-write mode, LCAS / UCASand OE to control output buffer impedance
 `512 refresh cycles every 8.2ms (A0~A8)
 `512 refresh cycles every 128ms (A0~A8) *
 `Byte or word control for Read/Write operation (2CAS, 1W type)
* : Applicable to self refresh version (M5M44260CJ,TP-5S,-6S,-7S
     : option) only


Pinout

Symbol
Parameter
Conditions
Rating
Unit
Vcc Supply voltage
 With respect to Vss
-1to+7
V
VI Input voltage
-1to+7
V
Vo Output voltage
-1to+7
V
Io Output current  
50
mA
Pd Power dissipation Ta=25
1000
mW
Topr Operating temperature  
0to70
Tstg Storage temperature  
-65 to +150



Description

This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.

The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is small enough for battery back-up application.

This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.




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