M58LW064C

Features: WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ Synchronous Burst read Asynchronous Random Read Asynchronous Address Latch Controlled Read...

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SeekIC No. : 004406125 Detail

M58LW064C: Features: WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOU...

floor Price/Ceiling Price

Part Number:
M58LW064C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

 WIDE x16 DATA BUS for HIGH BANDWIDTH
SUPPLY VOLTAGE
   VDD = 2.7 to 3.6V core supply voltage for Program,  Erase and Read operations
   VDDQ = 1.8 to VDD for I/O Buffers
SYNCHRONOUS/ASYNCHRONOUS READ
   Synchronous Burst read
   Asynchronous Random Read
   Asynchronous Address Latch Controlled Read
   Page Read
ACCESS TIME
    Synchronous Burst Read up to 56MHz
    Asynchronous Page Mode Read 110/25ns
    Random Read 110ns
PROGRAMMING TIME
    16 Word Write Buffer
    12s Word effective programming time
64 UNIFORM 64 KWord MEMORY BLOCKS
BLOCK PROTECTION/ UNPROTECTION
PROGRAM and ERASE SUSPEND
128bit PROTECTION REGISTER
COMMON FLASH INTERFACE
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
   Manufacturer Code: 0020h
    Device Code M58LW064C : 8820h



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
40
125
°C
TSTG
Storage Temperature
55
150
°C
VIO
Input or Output Voltage
0.6
VDDQ +0.6
V
VDD, VDDQ
Supply Voltage
0.6
5.0
V



Description

M58LW064C is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

The memory of M58LW064C is divided into 64 blocks of 1Mbit that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a Program or Erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards.

The Write Buffer of M58LW064C allows the microprocessor to program from 1 to 16 Words in parallel, both speeding up the programming and freeing up the microprocessor to perform other work. A Word Program command is available to program a single Word.

Erase can be suspended in order to perform either Read or Program in any other block and then resumed. Program can be suspended to Read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. Individual block protection against Program or Erase is provided for data security. All blocks are protected during power-up. The protection of the blocks is non-volatile; after power-up the protection status of each block is restored to the state when power was last removed. Software commands are provided to allow protection of some or all of the blocks and to cancel all block protection bits simultaneously. All Program or Erase operations are blocked when the Program Erase Enable input VPEN is low.

The Reset/Power-Down pin is used to apply a Hardware Reset to the memory and to set the device in power-down mode.

The STS pin of M58LW064C gives information about the memory status. It can be configured in two status: to output a static signal about the status of P/E C (when low P/E C is busy, when high P/E C is ready for a new operation) or to give a pulsing signal to indicate the end of programming or erasing blocks. In this last configuration it supplies a system interrupt signal useful for saving time.

In asynchronous mode Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. An Address Latch input can be used to latch addresses in Latch Controlled mode. Together they allow simple, yet powerful, connection to most microprocessors, often without additional logic.

In synchronous mode all Bus Read operations are synchronous with the Clock. Chip Enable and Output Enable select the Bus Read operation and the Latch Enable input is used to latch the address. The signals are compatible with most microprocessor burst interfaces.

The M58LW064C includes a 128 bit Protection Register. The Protection Register is divided into two 64 bit segments: the first contains a unique device number written by ST, the second is user programmable. The user programmable segment can be protected.

The memory of M58LW064C is available in TSOP56 (14 x 20 mm) and TBGA64 (10 x 13mm, 1mm pitch) packages.




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