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M5M29KB

Features: ·Access time Random 70ns (Max.)·Page 25ns(Max.)·Supply voltage VCC= 3.0 ~ 3.6V·Ambient temperature Ta=-40 ~ 85 °C·Package 48pin TSOP(Type-I), Lead pitch 0.5mm·Outer-lead finishing : Sn-CuApplication·Digital Cellar Phone, Telecommunication,·PDA, Car Navigation System, Video Game MachinePi...

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SeekIC No. : 004406178 Detail

M5M29KB: Features: ·Access time Random 70ns (Max.)·Page 25ns(Max.)·Supply voltage VCC= 3.0 ~ 3.6V·Ambient temperature Ta=-40 ~ 85 °C·Package 48pin TSOP(Type-I), Lead pitch 0.5mm·Outer-lead finishing : Sn-CuA...

M5M29KB Data Sheet

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Part Number:
M5M29KB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·Access time Random 70ns (Max.)
·Page 25ns(Max.)
·Supply voltage VCC= 3.0 ~ 3.6V
·Ambient temperature Ta=-40 ~ 85 °C
·Package 48pin TSOP(Type-I), Lead pitch 0.5mm
·Outer-lead finishing : Sn-Cu


Application

·Digital Cellar Phone, Telecommunication,
·PDA, Car Navigation System, Video Game Machine


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min.
Max.
Units
VCC
VCC Voltage
With Respect to GND
-0.2
4.6
V
VI1
All Input or Output Voltage1)
-0.6
4.6
V
Ta
Ambient Temperature
-40
85
°C
Tbs
Temperature under Bias
-50
95
°C
Tstg
Storage Temperature
-65
125
°C
Iout
Output Short Circuit Current
100
mA
Symbol
Parameter
Conditions
Min.
Max.
Units
VCC
VCC Voltage
With Respect to GND
-0.2
4.6
V
VI1
All Input or Output Voltage1)
-0.6
4.6
V
Ta
Ambient Temperature
-40
85
°C
Tbs
Temperature under Bias
-50
95
°C
Tstg
Storage Temperature
-65
125
°C
Iout
Output Short Circuit Current
100
mA

1)Minimum DC voltage is 0.5V on input / output pins. During transitions, the level may undershoot to 2.0V for periods <20ns. Maximum DC voltage on input / output pins is VCC+0.5V which, during transitions, may overshoot to VCC+1.5V for periods <20ns.




Description

The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank.

This M5M29KB/T331AVP BGO feature is suitable for mobile and personal computing, and communication products.

The M5M29KB/T331AVP are fabricated by CMOS technology for the peripheral circuit and DINOR IV(Divided bit-line NOR IV) architecture for the memory cell, and are available in 48pin TSOP(I) for lead free use.

M5M29KB/T331AVP provides for Software Lock Release function. Usually, all memory blocks are locked and can not be programmed or erased, when WP# is low. Using Software Lock Release function, program or erase operation can be executed.




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