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M5M44405CJ

Features: `Standard 26 pin SOJ, 26 pin TSOP(II)`Single 5V±10%supply`Low stand-by power dissipation CMOS lnput level 5.5mW (Max) * CMOS lnput level 550W (Max)`Low operating power dissipation M5M44405Cxx-5,-5S 687.5mW (Max) M5M44405Cxx-6,-6S 550.0mW (Max) M5M44405Cxx-7,-7S 467.5mW (Max)`Self refresh...

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SeekIC No. : 004406189 Detail

M5M44405CJ: Features: `Standard 26 pin SOJ, 26 pin TSOP(II)`Single 5V±10%supply`Low stand-by power dissipation CMOS lnput level 5.5mW (Max) * CMOS lnput level 550W (Max)`Low operating power dissipation M5M44405...

M5M44405CJ Data Sheet

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Part Number:
M5M44405CJ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Standard 26 pin SOJ, 26 pin TSOP(II)
`Single 5V±10%supply
`Low stand-by power dissipation
          CMOS lnput level 5.5mW (Max) *
          CMOS lnput level 550W (Max)
`Low operating power dissipation
          M5M44405Cxx-5,-5S 687.5mW (Max)
          M5M44405Cxx-6,-6S 550.0mW (Max)
          M5M44405Cxx-7,-7S 467.5mW (Max)
`Self refresh capabiility *
          Self refresh current 120A(max)
`Extended refresh capability *
          Extended refresh current 120A(max)
`Hyper-page mode (1024-bit random access), Read-modify- write,RAS-only refresh CASbefore RASrefresh, Hidden refresh, CBR self refresh(-5S,-6S,-7S) capabilities
`Early-write mode and OE and W to control output buffer impedance
`All inputs, output TTL compatible and low capacitance
`1024 refresh cycles every 16.4ms (A0~A9)
`1024refresh cycle every 128ms (A0~A9) *
`4-bit parallel test mode capability
* : Applicable to self refresh version (M5M44405CJ,TP-5S,-6S,-7S
      : option) only


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Rating
Unit
Vcc Supply voltage
 With respect to Vss
-1~7
V
VI Input voltage
-1~7
V
Vo Output voltage
-1~7
V
Io Output current  
50
mA
Pd Power dissipation T=25°C
1000
mW
Topr Operating temperature  
0~70
°C
Tstg Storage temperature  
-65~150
°C



Description

M5M44405CJ is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation,and low costs are essential.

The use of quadruple-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs.Multiplexed address inputs permit both a reduction in pins and an increase in system densities.

Self or extended refresh current is low enough for battery back-up application.




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