M58LV064B

Features: WIDE DATA BUS for HIGH BANDWIDTH M58LV064A: x16 M58LV064B: x16/x32SUPPLY VOLTAGE VDD = 3.0 to 3.6V M58LV064 core supply VDDQ = 1.8 to VDD for I/O BuffersSYNCHRONOUS/ASYNCHRONOUS READ Synchronous Burst read Pipelined Synchronous Burst Read Asynchronous Random Read Asynchronous Address Lat...

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SeekIC No. : 004406116 Detail

M58LV064B: Features: WIDE DATA BUS for HIGH BANDWIDTH M58LV064A: x16 M58LV064B: x16/x32SUPPLY VOLTAGE VDD = 3.0 to 3.6V M58LV064 core supply VDDQ = 1.8 to VDD for I/O BuffersSYNCHRONOUS/ASYNCHRONOUS READ Synch...

floor Price/Ceiling Price

Part Number:
M58LV064B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

 WIDE DATA BUS for HIGH BANDWIDTH
M58LV064A: x16
M58LV064B: x16/x32
 SUPPLY VOLTAGE
VDD = 3.0 to 3.6V M58LV064 core supply
VDDQ = 1.8 to VDD for I/O Buffers
 SYNCHRONOUS/ASYNCHRONOUS READ
Synchronous Burst read
Pipelined Synchronous Burst Read
Asynchronous Random Read
Asynchronous Address Latch Controlled Read
Page Read
 ACCESS TIME
Synchronous Burst Read up to 66MHz
Asynchronous Page Mode Read 150/25ns
Random Read 150ns
 PROGRAMMING TIME
16 Word or 8 Double-Word Write Buffer
12µs Word effective programming time
 64 UNIFORM 64 KWord MEMORY BLOCKS
 BLOCK PROTECTION/ UNPROTECTION
 PROGRAM and ERASE SUSPEND
 OTP SECURITY AREA
 COMMON FLASH INTERFACE
 100,000 PROGRAM/ERASE CYCLES per BLOCK
 ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code M58LV064A: 0015h
Device Code M58LV064B: 0014h



Pinout

  Connection Diagram


Specifications

Symbol Parameter Parameter Unit
Min Max
TBIAS Temperature Under Bias 40 125 °C
TSTG Storage Temperature 55 150 °C
TLEAD Maximum TLEAD Temperature during soldering   t.b.a. °C
VIO Input or Output Voltage 0.6 VDDQ +0.6 V
VDD, VDDQ Supply Voltage 0.6 5.0 V
VHH RP Hardware Block Unprotect Voltage 0.6 10 (1) V



Description

M58LV064 is a 64Mbit (4Mb x16 or 2Mb x32) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory default to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

The M58LV064 memory is divided into 64 blocks of 1Mbit that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a Program or Erase operation can be detected and any error conditions identified in the Status Register.

The M58LV064 command set required to control the memory is consistent with JEDEC standards. The Write Buffer allows the microprocessor to program from 4 to 16 Words (or from 2 to 8 Double Words) in parallel, both speeding up the programming and freeing up the microprocessor to perform other work. The minimum buffer size for a program operation is a 4 Word (or 2 Double Word) page. A page can only be programmed once between Erase operations.

Erase M58LV064 can be suspended in order to perform either Read or Program in any other block and then resumed. Program can be suspended to Read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.

M58LV064 Individual block protection against Program or Erase is provided for data security. All blocks are protected during power-up. The protection of the blocks is non-volatile; after power-up the protection status of each block is restored to the state when power was last removed. Software commands are provided to allow protection of some or all of the blocks and to cancel all block protection bits simultaneously. All Program or Erase operations are blocked when the Program Erase Enable input Vpp is low.

The M58LV064 Reset/Power-Down pin is used to apply a Hardware Reset to the memory and to set the device in deep power-down mode. It can also be used to temporarily disable the protection mechanism.

In asynchronous mode Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. An Address Latch input can be used to latch addresses in Latch Controlled mode. Together they allow simple, yet powerful, connection to most microprocessors, often without additional logic.

In synchronous mode all Bus Read operations are synchronous with the Clock. Chip Enable and Output Enable select the Bus Read operation; the address is Latched using the Latch Enable inputs and the address is advanced using Burst Address Advance. The signals are compatible with most microprocessor burst interfaces.

A One Time Programmable (OTP) area is included for security purposes. Either 1K Words (x16 Bus Width) or 1K Double-Words (x32 Bus Width) is available in the OTP area. The process of reading from and writing to the OTP area is not published for security purposes; contact STMicroelectronics for details on how to use the OTP area.

The M58LV064 memory is offered in various packages. The M58LV064A is available in TSOP56 (14 x 20 mm) and TBGA64 (1mm pitch). The M58LV064B is available in TBGA80 (1mm pitch).




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