DescriptionThe M58LW64D is a 64 Mbit (8Mb x 8 or 4Mbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V)core supply.M58LW64D has many unique features: (1) wide x8 or x16 data bus for high bandwidth; (2) ench...
M58LW64D: DescriptionThe M58LW64D is a 64 Mbit (8Mb x 8 or 4Mbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V)cor...
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Features: SUPPLY VOLTAGE VDD = 1.7V to 2.0V for program, erase and read VDDQ = 1.7V to 2.0V for I...
Features: SUPPLY VOLTAGE VDD = 1.7V to 2.0V for program, erase and read VDDQ = 1.7V to 2.0V for I...
Features: Supply voltage VDD = 1.7 V to 2.0 V for program, erase and read VDDQ = 1.7 V to 2.0 V f...
The M58LW64D is a 64 Mbit (8Mb x 8 or 4Mbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V)core supply.M58LW64D has many unique features: (1) wide x8 or x16 data bus for high bandwidth; (2) enchanced security; (3) program and erase suspend; (4) common flash interface,etc
There are some maximum ratings about M58LW64D. (1): temperature under bias(TBIAS) is40°C to 125°C; (2): storage Temperature(TSTG) is 55°C to 150 °C; (3): input or output voltage(VIO) is 0.6 V to VDDQ +0.6 V; (4): supply voltage (VDD, VDDQ) is 0.6 V to 5.0 V; (5): output short-circuit current(IOSC) is 100 mA.
Otherwise,there are some operating and AC measurement conditions of M58LW64D. (1): supply voltage(VDD) is 2.7 V min and 3.6 V max; (2): input or output supply voltage(VDDQ) is 2.7 V min and 3.6 V max; (3): load capacitance(CL) is 30 pF; (4): input pulses voltages is 0 V to VDDQ.