Features: ` WIDE x8 or x16 DATA BUS for HIGHBANDWIDTH` SUPPLY VOLTAGE VDD = VDDQ = 2.7 to 3.6V for Program, Erase nd Read operations` ACCESS TIME Random Read 90ns,110ns Page Mode Read 90ns/25ns, 110ns/25ns` PROGRAMMING TIME 16 Word Write Buffer 12ms Word effective programming time` 32 UNIFORM 64 K...
M58LW032D: Features: ` WIDE x8 or x16 DATA BUS for HIGHBANDWIDTH` SUPPLY VOLTAGE VDD = VDDQ = 2.7 to 3.6V for Program, Erase nd Read operations` ACCESS TIME Random Read 90ns,110ns Page Mode Read 90ns/25ns, 110...
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Features: SUPPLY VOLTAGE VDD = 1.7V to 2.0V for program, erase and read VDDQ = 1.7V to 2.0V for I...
Features: SUPPLY VOLTAGE VDD = 1.7V to 2.0V for program, erase and read VDDQ = 1.7V to 2.0V for I...
Features: Supply voltage VDD = 1.7 V to 2.0 V for program, erase and read VDDQ = 1.7 V to 2.0 V f...
Symbol |
Parameter |
Value
|
Unit | |
Min |
Max | |||
TBIAS |
Temperature Under Bias |
40 |
125 |
°C |
TSTG |
Storage Temperature |
55 |
150 |
°C |
VIO |
Input or Output Voltage |
0.6 |
VDDQ +0.6 |
V |
VDD, VDDQ |
Supply Voltage |
0.6 |
5.0 |
V |
IOSC |
Output Short-circuit Current |
100(1) |
mA |
Stressing the device above the ratings listed in Table 11, Absolute Maximum Ratings, may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.