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M58CR032D

Features: SUPPLY VOLTAGEVDD= 1.65V to 2V for Program, Erase and ReadVDDQ = 1.65V to 3.3V for I/O BuffersVPP= 12V for fast Program (optional)SYNCHRONOUS / ASYNCHRONOUS READBurst mode Read: 54MHzPage mode Read (4 Words Page)Random Access: 85, 100, 120 ns PROGRAMMING TIME10µs by Word typicalDou...

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SeekIC No. : 004406098 Detail

M58CR032D: Features: SUPPLY VOLTAGEVDD= 1.65V to 2V for Program, Erase and ReadVDDQ = 1.65V to 3.3V for I/O BuffersVPP= 12V for fast Program (optional)SYNCHRONOUS / ASYNCHRONOUS READBurst mode Read: 54MHzPage ...

M58CR032D Data Sheet

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Part Number:
M58CR032D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

SUPPLY VOLTAGE
VDD= 1.65V to 2V for Program, Erase and Read
VDDQ = 1.65V to 3.3V for I/O Buffers
VPP= 12V for fast Program (optional)
SYNCHRONOUS / ASYNCHRONOUS READ
Burst mode Read: 54MHz
Page mode Read (4 Words Page)
Random Access: 85, 100, 120 ns PROGRAMMING TIME
10µs by Word typical
Double/Quadruple Word programming option MEMORY BLOCKS
Dual Bank Memory Array: 8/24 Mbit
Parameter Blocks (Top or Bottom location)  DUAL OPERATIONS
Read in one Bank while Program or Erase in  other
No delay between Read and Write operations BLOCK LOCKING
All blocks locked at Power up
Any combination of blocks can be locked
WP for Block Lock-Down SECURITY
64 bit user programmable OTP cells
64 bit unique device identifier
One parameter block permanently lockable
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per  BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M58CR032C: 88C8h
Bottom Device Code, M58CR032D: 88C9h


Specifications

Symbol Parameter Value Unit
TA Ambient Operating Temperature 40 to 85 °C
TBIAS Temperature Under Bias 40 to 125 °C
TSTG Storage Temperature 55 to 155 °C
VIO(1) Input or Output Voltage 0.5 to VDDQ+0.5 V
VDD,VDDQ Supply Voltage 0.5 to 2.7 V
VPP Program Voltage 0.5 to 13 V



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