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M5M44265CJ

Features: `Standard 40pin SOJ, 44 pin TSOP (II)`Single 5V±10% supply`Low stand-by power dissipation CMOS Input level 5.5mW (Max)CMOS Input level 550W (Max)*`Operating power dissipation M5M44265Cxx-5,-5S 688mW (Max) M5M44265Cxx-6,-6S 605mW (Max) M5M44265Cxx-7,-7S 523mW (Max)`Self refresh capability...

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SeekIC No. : 004406188 Detail

M5M44265CJ: Features: `Standard 40pin SOJ, 44 pin TSOP (II)`Single 5V±10% supply`Low stand-by power dissipation CMOS Input level 5.5mW (Max)CMOS Input level 550W (Max)*`Operating power dissipation M5M44265Cxx-5...

M5M44265CJ Data Sheet

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Part Number:
M5M44265CJ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

`Standard 40pin SOJ, 44 pin TSOP (II)
`Single 5V±10% supply
`Low stand-by power dissipation
          CMOS Input level 5.5mW (Max)
          CMOS Input level 550W (Max)*
`Operating power dissipation
          M5M44265Cxx-5,-5S 688mW (Max)
          M5M44265Cxx-6,-6S 605mW (Max)
          M5M44265Cxx-7,-7S 523mW (Max)
`Self refresh capability*
          Self refresh current 150A (Max)
`Extended refresh capability
          Extended refresh current 150A (Max)
`Hyper-page mode (512-column random access), Read-modifywrite,RAS-only refresh, CAS before RAS refresh, Hidden refresh capabilities.
`Early-write mode, OE and W to control output buffer impedance
`512 refresh cycles every 8.2ms (A0~A8)
`512 refresh cycles every 128ms (A0~A8)*
`Byte or word control for Read/Write operation (2CAS, 1Wtype)
* : Applicable to self refresh version (M5M44265CJ,TP-5S,-6S,-7S
     : option) only


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Rating
Unit
Vcc Supply voltage
 With respect to Vss
-1~7
V
VI Input voltage
-1~7
V
Vo Output voltage
-1~7
V
Io Output current  
50
mA
Pd Power dissipation T=25°C
1000
mW
Topr Operating temperature  
0~70
°C
Tstg Storage temperature  
-65~150
°C



Description

ThisM5M44265CJ  is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential.

The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.

This M5M44265CJ device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.




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