Features: `Standard 40pin SOJ, 44 pin TSOP (II)`Single 5V±10% supply`Low stand-by power dissipation CMOS Input level 5.5mW (Max)CMOS Input level 550W (Max)*`Operating power dissipation M5M44265Cxx-5,-5S 688mW (Max) M5M44265Cxx-6,-6S 605mW (Max) M5M44265Cxx-7,-7S 523mW (Max)`Self refresh capability...
M5M44265CJ: Features: `Standard 40pin SOJ, 44 pin TSOP (II)`Single 5V±10% supply`Low stand-by power dissipation CMOS Input level 5.5mW (Max)CMOS Input level 550W (Max)*`Operating power dissipation M5M44265Cxx-5...
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Features: • Standard 26 pin SOJ, 26 pin TSOP• Single 5V ± 10% supply• Low stand-...
Features: • Standard 26 pin SOJ, 26 pin TSOP• Single 5V ± 10% supply• Low stand-...
Features: `Standard 40pin SOJ, 44 pin TSOP (II) Single 5V±10% supply`Low stand-by power dissipatio...
Symbol |
Parameter |
Conditions |
Rating |
Unit |
Vcc | Supply voltage |
With respect to Vss |
-1~7 |
V |
VI | Input voltage |
-1~7 |
V | |
Vo | Output voltage |
-1~7 |
V | |
Io | Output current |
50 |
mA | |
Pd | Power dissipation | T=25°C |
1000 |
mW |
Topr | Operating temperature |
0~70 |
°C | |
Tstg | Storage temperature |
-65~150 |
°C |
ThisM5M44265CJ is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential.
The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.
This M5M44265CJ device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.