M58MR016D

The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.7V to 2.0V V_DD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

The M58MR016D supports synchronous burst read and asynchronous read from all the blocks of the memory array; at power-up the device is configured for page mode read. In synchronous burst mode, a new data is output at each clock cycle for frequencies up to 40MHz.

The array matrix organization of M58MR016D allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power-up.

Blocks can be unprotected to make changes in the application and then re-protected.

A parameter block "Security block" can be permanently protected against programming and erasing in order to increase the data security. An optional 12V VPP power supply of M58MR016D is provided to speed up the program phase at costumer production. An internal command interface (C.I.) decodes the instructions to access/modify the memory content. The program/erase controller (P/E.C.) automatically executes the algorithms taking care of the timings necessary for program and erase operations. Two status registers indicate the state of each bank.

Instructions for Read Array, Read Electronic Signature, Read Status Register, Clear Status Register, Write Read Configuration Register, Program, Block Erase, Bank Erase, Program Suspend, Program Resume, Erase Suspend, Erase Resume, Block Protect, Block Unprotect, Block Locking, Protection Program, CFI Query, are written to the memory through a Command Interface (C.I.) using standard micro-processor write timings.

The memory is offered in TFBGA48, 0.5 mm ball pitch packages and it is supplied with all the bits erased (set to '1').