M59BW102

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.

The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V V_CC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The device M59BW102 can be programmed and erased over 100,000 cycles.

Instructions for Read/Reset, Auto Select for reading the Electronic Signature, Programming and Chip Erase are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The M59BW102 features an interleaved access modality which allows extremely fast access time.The device is offered in TSOP40 (10 x 14mm) package.