Features: ` MASK-ROM PIN-OUT COMPATIBLE` SUPPLY VOLTAGE VCC= 2.7 to 3.6V for Read VPP = 11.4 to 12.6V for Program` ACCESS TIME 90ns at VCC = 3.0 to 3.6V 100, 110ns at VCC = 2.7 to 3.6V` PROGRAMMING TIME 9s per Word typical Multiple Word Programming Option(8s typical Chip Program)`SUITABLE FO...
M59PW064: Features: ` MASK-ROM PIN-OUT COMPATIBLE` SUPPLY VOLTAGE VCC= 2.7 to 3.6V for Read VPP = 11.4 to 12.6V for Program` ACCESS TIME 90ns at VCC = 3.0 to 3.6V 100, 110ns at VCC = 2.7 to 3.6V` PROGRAMM...
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Stressing the device above the rating listed in the Absolute Maximum Ratings" table may cause permanent
damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Symbol |
Quantity |
Min. |
Max. |
Unit |
TBIAS |
Temperature Under Bias |
-50 |
125 |
°C |
TSTG |
Storage Temperature |
-65 |
150 |
°C |
VIO |
Input or Output Voltage(1,2) |
-0.6 |
VCC+0.6 |
V
|
VCC |
Read Supply Voltage |
-0.6 |
4 |
V |
VPP |
Program/Erase Supply Voltage (3) |
-0.6 |
13.5 |
V |
The M59PW064 is a 64Mbit (4Mbx16), Mask-ROM pin-out compatible, non-volatile LightFlash memory, that can be read, erased and reprogrammed. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program and Erase operations require an additional VPP (11.4 to 12.6V) power supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The M59PW064 memory is divided into 32 uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased (see Table 2., Block Addresses). Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller (P/E.C.) simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
The M59PW064 features an innovative command,Multiple Word Program, that is used to program large streams of data. It greatly reduces the total programming time when a large number of Words are written to the memory at any one time. Using this command the entire memory can be programmed in 8s, compared to 36s using the standard
Word Program.
The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.Chip Enable and Output Enable signals control the
bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.
The M59PW064 memory is offered in SO44 and TSOP48 (12 x 20mm) packages. The memory is supplied with all the bits set to '1').