Features: `Organization 524,288 word x 16bit..............................1,048,576 word x 8 bit.`Supply voltage ................................ VCC = 3.3V±0.3V`Access time 80/100/120ns (Max)`Power DissipationRead .........................108 mW (Max.) Program/Erase ........................144 mW...
M5M29T800FP: Features: `Organization 524,288 word x 16bit..............................1,048,576 word x 8 bit.`Supply voltage ................................ VCC = 3.3V±0.3V`Access time 80/100/120ns (Max)`Power...
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Features: ·Speed item ........................................................ 85 ns (max.) .........
Features: `On-board single power supply(Vcc) : Vcc=3.0V to 3.6V`OrganizationAND Flash Memory : (20...
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
VCC | VCC Voltage | With Respect to Ground |
-0.2to4.6 |
V |
VI1 | All input or output voltage except Vcc,A9,/RP1) |
-0.6to4.6 |
V | |
VI2 | A9,RP supply voltage |
-0.6to14.0 |
V | |
Ta | Ambient Temperature |
0to70 |
°C | |
Tbs | Temperature under Bias |
-10to80 |
°C | |
Tstg | Storage temperature |
-65to125 |
°C | |
Iout | Output Short Circuit Current |
0to100 |
mA |
The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin TSOP(I).