M58LW032A

Features: WIDE x16 DATA BUS for HIGH BANDWIDTHSUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations VDDQ = 1.8V to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ Synchronous Burst read Asynchronous Random Read Asynchronous Address Latch Controlled Read Page...

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SeekIC No. : 004406117 Detail

M58LW032A: Features: WIDE x16 DATA BUS for HIGH BANDWIDTHSUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations VDDQ = 1.8V to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS ...

floor Price/Ceiling Price

Part Number:
M58LW032A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

WIDE x16 DATA BUS for HIGH BANDWIDTH
SUPPLY VOLTAGE
    VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
    VDDQ = 1.8V to VDD for I/O Buffers
SYNCHRONOUS/ASYNCHRONOUS READ
    Synchronous Burst read
    Asynchronous Random Read
    Asynchronous Address Latch Controlled Read
    Page Read
ACCESS TIME
    Synchronous Burst Read up to 56MHz
    Asynchronous Page Mode Read 90/25ns and 110/25ns
    Random Read 90ns, 110ns.
PROGRAMMING TIME
    16 Word Write Buffer
    18ms Word effective programming time
64 UNIFORM 32 KWord MEMORY BLOCKS
BLOCK PROTECTION/ UNPROTECTION
PROGRAM and ERASE SUSPEND
128 bit PROTECTION REGISTER
COMMON FLASH INTERFACE
100, 000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
    Manufacturer Code: 0020h
    Device Code M58LW032A: 8816h



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
40
125
°C
TSTG
Storage Temperature
55
150
°C
VIO
Input or Output Voltage
0.6
VDDQ +0.6
V
VDD, VDDQ
Supply Voltage
0.6
5.0
V



Description

The M58LW032 is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

The M58LW032 memory is divided into 64 blocks of 512Kbit that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a Program or Erase operation can be detected and any error conditions identified in the Status Register.The command set required to control the memory is consistent with JEDEC standards.

The M58LW032 Write Buffer allows the microprocessor to program from 1 to 16 Words in parallel, both speeding up the programming and freeing up the microprocessor to perform other work. A Word Program command is available to program a single word.

M58LW032 Erase can be suspended in order to perform either Read or Program in any other block and then resumed. Program can be suspended to Read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.

M58LW032 Individual block protection against Program or Erase is provided for data security. All blocks are protected during power-up. The protection of the blocks is non-volatile; after power-up the protection status of each block is restored to the state when power was last removed. Software commands are provided to allow protection of some or all of the blocks and to cancel all block protection bits simultaneously. All Program or Erase operations are blocked when the Program Erase Enable input Vpp is low.

The M58LW032 Reset/Power-Down pin is used to apply a Hardware Reset to the memory and to set the device in power-down mode.

In asynchronous mode Chip Enable, M58LW032 Output Enable and Write Enable signals control the bus operation of the memory. An Address Latch input can be used to latch addresses. Together they allow simple, yet powerful, connection to most microprocessors, often without additional logic.

In synchronous mode all Bus Read operations are synchronous with the Clock. Chip Enable and Output Enable select the Bus Read operation and the address is Latched using the Latch Enable input. The signals are compatible with most microprocessor burst interfaces.

The device M58LW032 includes a 128 bit Protection Register. The Protection Register is divided into two 64 bit segments, the first one is written by the manufacturer (contact STMicroelectronics to define the code to be written here), while the second one is programmable by the user. The user programmable segment can be locked.

The M58LW032 memory is available in TSOP56 (14 x 20 mm) and TBGA64 (10 x 13mm, 1mm pitch) packages.




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