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Index M : MRF9120LR3,MRF9100SR3,MRF6P21190HR6,
MRF9120LR3
Mfg:MOT D/C:00+ Vendor:Other Category:Other
MRF9120LR3 is Designed for broadband commercial and industrial applications with frequen- cies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source...MRF9100SR3
Vendor:Other Category:Other
MRF9100SR3 is Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for largesignal, common source amplifier ap...MRF9100R3
Mfg:freescale D/C:05+ Vendor:Other Category:Other
MRF9100R3 is Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for largesignal, common source amplifier app...MRF9100
Mfg:Freescale Vendor:Other Category:Other
MRF9100 is Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for largesignal, common source amplifier appli...MRF9085LSR3
Mfg:MOT D/C:02+ Vendor:Other Category:Other
MRF9085LSR3 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common-source...MRF9085LR3
Mfg:MOTOROLA D/C:05+ Vendor:Other Category:Other
MRF9085LR3 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common-source ...MRF9080SR3
Mfg:MOTOROLA D/C:01+ Vendor:Other Category:Other
MRF9080SR3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.MRF9080R5
Vendor:Other Category:Other
The MRF9080R5 is one kind of GSM 900 MHz, 75 W, 26 V lateral N-channel broadband RF power MOSFET that designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for ...MRF9080R3
Vendor:Other Category:Other
MRF9080R3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.MRF9080LSR3
Vendor:Other Category:Other
MRF9080LSR3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.MRF9080LR3
Mfg:Freescale Pack:NI-787 D/C:07+ Vendor:Other Category:Other
MRF9080
Mfg:MOT Vendor:Other Category:Other
MRF9080 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.MRF9060SR1
Vendor:Other Category:Other
MRF9060SR1 is Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier...MRF9060R1
Vendor:Other Category:Other
MRF9060R1 is Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier ...MRF9060
Vendor:Other Category:Other
The MRF9060 is designed as one kind of RF power filed effect transistors (N-channel enhancement-mode lateral MOSFETs) that designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The...MRF905
Mfg:MOTOROLA Pack:CAN4 D/C:05+ Vendor:Other Category:Other
The ASI MRF905 is Designed for General Purpose Oscillator Applications.MRF9045MR1
Mfg:MOT D/C:07+ Vendor:Other Category:Other
MRF9045MR1 is Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source ampli...MRF9045MBR1
Vendor:Other Category:Other
MRF9045MBR1 is Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source ampl...MRF9045LSR1
Vendor:Other Category:Other
MRF9045LR1
Mfg:120 Pack:MOTOROLA Vendor:Other Category:Other
MRF904
Mfg:MOT Pack:CAN4 D/C:05+ Vendor:Microsemi-PPG Category:Discrete Semiconductor Products
TRANS NPN 15V 30MA TO-72MRF904 is Designed primarily for use IN High Gain, low noise general purpose amplifiers.MRF9030SR1
Vendor:Other Category:Other
MRF9030SR1 is Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier...MRF9030R1
Vendor:Other Category:Other
MRF9030R1 is Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier ...MRF9030
Vendor:Other Category:Other
The MRF9030 is designed as one kind of RF power filed effect transistors (N-channel enhancement-mode lateral MOSFETs) that designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The...MRF9011LT1
Mfg:Motorola Pack:Sot-143 D/C:09+ Vendor:Other Category:Other
MRF9011LT1 is Designed primarily for use in highgain, lownoise smallsignal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.MRF9002RS
Vendor:Other Category:Other
MRF9002R2
Mfg:MOTOROLA D/C:N/A Vendor:Other Category:Other
MRF9002R2 is Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large - signal, common-source amplifier app...MRF899D
Vendor:Other Category:Other
MRF899
Mfg:MOT Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
TRANS RF 150W 900MHZ NI-860C3MRF897R
Mfg:MOTOROLA Vendor:Other Category:Other
MRF897
Mfg:MOT Vendor:Other Category:Other
MRF894
Mfg:MOTOROLA Vendor:Other Category:Other
MRF892
Mfg:MOTOROLA Vendor:Other Category:Other
The ASI MRF892 is Designed for Class AB, Cellular Base Station Applications up to 900 MHz.MRF891S
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
MRF891
Mfg:1 Pack:MOT Vendor:Other Category:Other
MRF890
Mfg:MOTOROLA Vendor:Other Category:Other
The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment.MRF846
Mfg:MOT Vendor:Other Category:Other
The MRF846 is Designed for UFH Large-Signal, Common Base Amplifier Applicatons Up to 960 MHz.MRF839F
Mfg:ASI Pack:230 6L Vendor:Other Category:Other
The MRF839F is Designed for Class AB, Common Emitter Applicatons Up to 960 MHz.MRF838A
Mfg:MOT Pack:TO-55r D/C:04+ Vendor:Other Category:Other
The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz.MRF837
Mfg:MOTOROLA Pack:MODULE D/C:530 Vendor:Other Category:Other
The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.MRF7S35120HSR
Vendor:Other Category:Other
The MRF7S35120HSR is one kind of 3100-3500 MHz, 120 W peak, 32 V pulsed lateral N-channel RF power MOSFETs that designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. Features of t...MRF7S19120NR
Vendor:Other Category:Other
The MRF7S19120NR is one kind of 1930-1990 MHz, 36 W AVG., 28 V single W-CDMA lateral N-channel RF power MOSFETs that designed for CDMA base station applications. Also it can be used in Class AB and Class C for all typica...MRF7S19100NBR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 29W TO272-4The MRF7S19100NBR1 is one kind of the 1930-1990 MHz, 29 W AVG., 28 V single W-CDMA lateral N-channel RF power MOSFETs that designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for ...MRF7S19080HSR3
Mfg:Freescale Pack:NI-780S Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH NI-780SMRF7S19080HSR3 is Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS...MRF7S19080HR3
Mfg:FREESCALE D/C:07/08+ Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH NI-780MRF7S19080HR3 is Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/...MRF7S18125BH
Vendor:Other Category:Other
The MRF7S18125BH is N-Channel Enhancement -Mode Lateral MOSFET. It is designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. It can be used in Class AB and Class C for all typical...MRF752
Mfg:Asi Vendor:Other Category:Other
The ASI MRF752 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V.MRF750
Mfg:Asi Vendor:Other Category:Other
The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V.MRF6VP41KHR5
Vendor:Other Category:Other
The MRF7S19100NBR1 is one kind of the 10-450 MHz, 1000 W, 50 V lateral N-channel RF power MOSFETs that designed for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for ...MRF6V2010NBR
Vendor:Other Category:Other
The MRF6V2010NBR is one kind of 10-450 MHz, 10 W, 50 V lateral N-channel broadband RF power MOSFETs that designed for CW large-signal output and driver applications with frequencies up to 450 MHz. Also this device is un...MRF6S9125NR1
Mfg:freescale Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 27W TO-270-4MRF6S9125NBR1
Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 27W TO-272-4MRF6S9125MR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 27W TO-270-4MRF6S9125MBR1
Vendor:Other Category:Other
MRF6S9060NR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 14W TO-270-2MRF6S9060NR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source ampl...MRF6S9060NBR1
Mfg:MOT Pack:HV6 60W TO272-2N FET D/C:07+ Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 14W TO-272-2MRF6S9060NBR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amp...MRF6S9060MR1
Vendor:Other Category:Other
MRF6S9060MR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source ampl...MRF6S9060MBR1
Vendor:Other Category:Other
MRF6S9060MBR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amp...MRF6S9045NR1
Mfg:FREESCALE D/C:07/08+ Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 10W TO-270-2MRF6S9045NR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source ampl...MRF6S9045NBR1
Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 10W TO-272-2MRF6S9045NBR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amp...MRF6S9045MR1
Vendor:Other Category:Other
MRF6S9045MR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source ampl...MRF6S9045MBR1
Vendor:Other Category:Other
MRF6S9045MBR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amp...MRF6S27085HSR3
Mfg:Freescale Pack:465A-06 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 20W NI-780SMRF6S27085HSR3 is Designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio ...MRF6S27085HSR
Vendor:Other Category:Other
The MRF6S27085HSR is one kind of 2700 MHz, 20 W AVG., 28 V single N-CDMA lateral N-channel RF power MOSFETs that designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. It can be used in TDM...MRF6S27085HR3
Mfg:Freescale Pack:465-06 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 20W NI-780MRF6S27085HR3 is Designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio a...MRF6S27015NR1
Vendor:Other Category:Other
MRF6S27015NR1 is Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.• Typical Singl...MRF6S27015GNR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
IC MOSFET RF N-CHAN TO270-2 GWMRF6S27015GNR1 is Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.• Typical Sing...MRF6S23100HSR3
Mfg:Freescale Pack:465A-06 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 20W NI-780SMRF6S23100HSR3 is Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.MRF6S23100HR3
Mfg:Freescale Pack:465-06 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 20W NI-780MRF6S23100HR3 is Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.MRF6S21140HSR3
Mfg:Freescale Pack:465C-02 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 30W NI-880SMRF6S21140HSR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio ...MRF6S21140HS
Vendor:Other Category:Other
The MRF6S21140HS has nine features.(1)characterized with series equivalent large-signal impedance parameters.(2)internally matched for ease of use.(3)qualified up to a maximum of 32 VDD operation.(4)integrated ESD protec...MRF6S21140HR3
Mfg:FREESCALE D/C:07/08+ Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 30W NI-880MRF6S21140HR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio a...MRF6S21140HR
Vendor:Other Category:Other
The MRF6S21140HR is one kind of 2110-2170 MHz, 30 W AVG., 28 V 2xW-CDMA lateral N-channel RF power MOSFETs that designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. It can be used in TDMA...MRF6S21100NR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 23W TO270-4MRF6S21100NBR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 23W TO272-4MRF6S21100HSR3
Mfg:Freescale Pack:465A-06 Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 23W NI-780SMRF6S21100HSR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio ...MRF6S21100HR3
Mfg:FREESCALE D/C:07/08+ Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 23W NI-780MRF6S21100HR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and ...MRF6S21060NR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 14W TO270-4The MRF6S21060NR1 is one kind of 2110-2170 MHz, 30 W AVG., 28 V 2xW-CDMA lateral N-channel RF power MOSFETs that designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. It can be used in TDM...MRF6S21060NBR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 14W TO272-4MRF6S21050LSR3
Mfg:Freescale Pack:465F-04 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 11.5W NI-400SMRF6S21050LSR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio ...MRF6S21050LR3
Mfg:Freescale Pack:465E 04 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 11.5W NI-400MRF6S21050LR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio a...MRF6S20010NR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 10W TO270-2MRF6S20010GNR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 10W TO2704 GWMRF6S19140HSR3
Mfg:Freescale Pack:465C-02 Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 29W NI-880SMRF6S19140HSR3 is Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular ra...MRF6S19140HR3
Mfg:Freescale Pack:465B-03 Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 29W NI-880MRF6S19140HR3 is Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular rad...MRF6S19100HSR3
Mfg:Freescale Pack:465A-06 Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 22W NI-780SMRF6S19100HR3
Mfg:Freescale Pack:465-06 Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 22W NI-780MRF6S18140HR
Vendor:Other Category:Other
The MRF6S18140HR is one kind of 1805-1880 MHz, 29 W AVG., 28 V 2 x N-CDMA lateral N-channel broadband RF power MOSFETs that designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. This devic...MRF6S18100NR1
Mfg:Freescale D/C:07/08+ Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 100W TO2704MRF6S18100NBR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 100W TO2724MRF6S18060NR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 26V 60W TO270-4MRF6S18060NBR1
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 26V 60W TO272-4MRF6S18060MR1
Vendor:Other Category:Other
MRF6S18060MBR1
Vendor:Other Category:Other
MRF6P9220HR3
Mfg:Freescale Pack:375G-04 Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 47W NI-860C3MRF6P9220HR3 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source ampl...MRF6P3300HR5
Mfg:FREESCALE D/C:07/08+ Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 32V 300W NI-860C3MRF6P3300HR5 is Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amp...MRF6P3300HR3
Mfg:Freescale Pack:375G-04 Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 32V 300W NI-860C3MRF6P3300HR3 is Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amp...MRF6P27160HR6
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 35W NI-1230MRF6P27160HR6 is Designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio a...MRF6P23190HR6
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 40W NI-1230MRF6P21190HR6
Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 44W NI-1230MRF6P21190HR6 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio a...