Transistors RF MOSFET Power HV6 W-CDMA 11.5W NI400LS
MRF6S21050LSR3: Transistors RF MOSFET Power HV6 W-CDMA 11.5W NI400LS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 2.11 GHz to 2.17 GHz | Gain : | 16 dB | ||
Output Power : | 11.5 W | Drain-Source Breakdown Voltage : | 68 V | ||
Gate-Source Breakdown Voltage : | - 0.5 V, + 12 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-400S-3 | Packaging : | Reel |
Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA,Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain ó 16 dB Drain Efficiency ó 27.7% IM3 @ 10 MHz Offset ó -37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset ó -40 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | -0.5, +68 | Vdc |
Gate-Source Voltage | VGS | -0.5, +12 | Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 151 0.86 |
W W/°C |
Storage Temperature Range | Tstg | -65 to +150 | °C |
Operating Junction Temperature | TJ | 200 | °C |
CW Operation | CW | 50 | W |
MRF6S21050LSR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Technical/Catalog Information | MRF6S21050LSR3 |
Vendor | Freescale Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | NI-400S |
FET Type | N-Channel |
Typical RF Application | CDMA |
Typical RF Application | TDMA |
Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
Power Dissipation | 11.500 W [Max] |
Packaging | Tape & Reel, 13" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF6S21050LSR3 MRF6S21050LSR3 |