MRF7S18125BH

The MRF7S18125BH is N-Channel Enhancement -Mode Lateral MOSFET. It is designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. It can be used in Class AB and Class C for all typical cellular base station modulations.

The features of MRF7S18125BH can be summarized as:(1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Integrated ESD Protection; (4)RoHS Compliant; (5)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

The absolute maximum ratings of MRF7S18125BH are:(1)Drain-Source Voltage:-0.5V to +65V; (2)Gate-Source Voltage:-6.0V to +10V; (3)Operating Voltage:+0V to +32V; (4)Storage Temperature Range:- 65°C to +150 °C; (5)Case Operating Temperature:150 °C; (6)Operating Junction Temperature:225 °C.

The electrical characteristics of the MRF7S18125BH are:(1)Zero Gate Voltage Drain Leakage Current(VDS = 65V, VGS = 0V):10uA; (2)Zero Gate Voltage Drain Leakage Current(VDS = 28V, VGS = 0V):1uA; (3)Gate-Source Leakage Current(VGS = 5V, VDS = 0V):1uA; (4)Gate Threshold Voltage(VDS = 10V, ID = 316A):1.2V to 2.7V; (5)Fixture Gate Quiescent Voltage(VDD = 28V, ID = 1100mA, Measured in Functional Test):4V to 7V; (6)Drain-Source On-Voltage(VGS = 10V, ID = 3.16A):0.1V to 0.3V; (7)Reverse Transfer Capacitance(VDS = 28V ± 30 mV(rms)ac @ 1 MHz, VGS = 0V):1.15pF.

If you want to know more information such as the electrical characteristics about the MRF7S18125BH, please download the datasheet in www.seekic.com or www.chinaicmart.com .