MRF6S21100NBR1 Selling Leads, Price trend , Freescale Semiconductor, MRF6S21100NBR1 DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00220411 Detail

MRF6S21100NBR1: Transistors RF MOSFET Power 2170MHZ 23W

MRF6S21100NBR1 Data Sheet

Get Latest Price

Part Number:: MRF6S21100NBR1
Mfg:: Freescale Semiconductor
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

MRF607 evaluate
Features: · 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor· 1.75 Watt Minimum Power Ou...
MRF616 evaluate
Features: • High Gain, 11 DB Typical• Gold Metallization• Emitter BallastingSpec...
MRF627 evaluate
Features: • Common Emitter• PG = 13 dB at 0.5 W/470 MHz• Omnigold™ Metaliz...

Product Details

Quick Details

Configuration :	Single Dual Drain Dual Gate	Transistor Polarity :	N-Channel
Drain-Source Breakdown Voltage :	68 V	Gate-Source Breakdown Voltage :	- 0.5 V, 12 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	TO-272 WB EP
Packaging :	Reel

Description

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Single Dual Drain Dual Gate
Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Package / Case : TO-272 WB EP
Drain-Source Breakdown Voltage : 68 V

Specifications

Rating	Symbol	Value	Unit
Drain−Source Voltage	V_DSS	−0.5, +68	Vdc
Gate−Source Voltage	V_GS	−0.5, +12	Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C	P_D	307 1.75	W W/°C
Storage Temperature Range	T_stg	−65 to +175	°C
Operating Junction Temperature	T_J	200	°C

Parameters:

Technical/Catalog Information	MRF6S21100NBR1
Vendor	Freescale Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	28V
Current Rating	950mA
Package / Case	TO-272-4
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRF6S21100NBR1 MRF6S21100NBR1

Customers Who Bought This Item Also Bought

MRF604
US $$5.00 - 5.20 / Piece

Supply Ability:10000Week

View details
MRF604 NPN SILICON RF POWER TRANSISTOR
US $$6.58 - 6.60 / Piece

Supply Ability:1000Week

View details
MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
US $$1.23 - 1.25 / Piece

Supply Ability:2000Week

View details
MRF616 NPN SILICON RF POWER TRANSISTOR
US $$7.06 - 7.08 / Piece

Supply Ability:1000Week

View details
MRF619 NPN SILICON RF POWER TRANSISTOR
US $$12.48 - 12.50 / Piece

Supply Ability:1000Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

MRF6S21100NBR1

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Batteries, Chargers, Holders(975)

Cables, Wires - Management(4448)

Switches(5620)

Optoelectronics(3638)

Connectors, Interconnects(19973)

Potentiometers, Variable Resistors(1370)