Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Voltage - Test: 28V
Current - Test: 450mA
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Voltage - Rated: 68V
Package / Case: TO-272BC
Supplier Device Package: TO-272-2
Frequency: 880MHz
Power - Output: 14W
Gain: 21.4dB
Features: Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain ó 21.4 dB Drain Efficiency ó 32.1% ACPR @ 750 kHz Offset ó -47.6 dBc @ 30 kHz Bandwidth
ApplicationTypical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (921-960 MHz) Power Gain ó 20 dB Drain Efficiency ó 46% Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM ó 1.5% rms
Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,Full Frequency Band (921-960 MHz) Power Gain ó 20 dB Drain Efficiency ó 68%
Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200°C Capable Plastic Package
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Specifications
| Rating |
Symbol |
Value |
Unit |
| Drain-Source Voltage |
VDSS |
-0.5, +68 |
Vdc |
| Gate-Source Voltage |
VGS |
-0.5, +12 |
Vdc |
Total Device Dissipation @ TC = 25°C
Derate above 25°C |
PD |
227
1.3 |
W
W/°C |
| Storage Temperature Range |
Tstg |
-65 to +150 |
°C |
| Operating Junction Temperature |
TJ |
200 |
°C |
DescriptionMRF6S9060NBR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amplifier applications in 28 volt base station equipment.
Parameters: | Technical/Catalog Information | MRF6S9060NBR1 |
| Vendor | Freescale Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | TO-272-2 |
| FET Type | N-Channel |
| Typical RF Application | CDMA |
| Typical RF Application | TDMA |
| Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
| Power Dissipation | 14.000 W [Max] |
| Packaging | Tape & Reel, 13" |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6S9060NBR1
MRF6S9060NBR1
|
MRF6S9060NBR1 Data Sheet
