MRF6S9125MR1

MOSFET RF N-CH 28V 27W TO-270-4

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MRF6S9125MR1 Picture
SeekIC No. : 003434798 Detail

MRF6S9125MR1: MOSFET RF N-CH 28V 27W TO-270-4

floor Price/Ceiling Price

Part Number:
MRF6S9125MR1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Series: - Continuous Collector Current : 5 mA
Manufacturer: Freescale Semiconductor Transistor Type: LDMOS
Frequency: 880MHz Gain: 20.2dB
Voltage - Test: 28V Current Rating: 10µA
Noise Figure: - Current - Test: 950mA
Power - Output: 27W Voltage - Rated: 68V
Package / Case: TO-270-4 Supplier Device Package: TO-270 WB-4    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Voltage - Test: 28V
Current - Test: 950mA
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Voltage - Rated: 68V
Frequency: 880MHz
Supplier Device Package: TO-270 WB-4
Gain: 20.2dB
Power - Output: 27W
Package / Case: TO-270-4


Application

N-CDMA Application
• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =950 mA, Pout = 27 Watt Avg., Full Frequency Band (865-895 MHz), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
   Power Gain- 20.2 dB
   Drain Efficiency- 31%
   ACPR @ 750 kHz Offset = -47.1 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,Pout = 60 Watts Avg., Full Frequency Band (865-895 MHz or 921-960 MHz)
   Power Gain- 20 dB
   Drain Efficiency - 40% (Typ)
   Spectral Regrowth @ 400 kHz Offset = -63 dBc
   Spectral Regrowth @ 600 kHz Offset = -78 dBc
   EVM-1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =125 Watts, Full Frequency Band (921-960 MHz)
  
Power Gain - 19 dB
   Drain Efficiency - 62%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,@ f = 880 MHz
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.




Specifications

Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
−0.5, +68
Vdc
Gate−Source Voltage
VGS
−0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
398
2.3
W
W/°C
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
200
°C



Parameters:

Technical/Catalog InformationMRF6S9125MR1
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating950mA
Package / CaseTO-270-4
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MRF6S9125MR1
MRF6S9125MR1



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