Transistors RF MOSFET Power HV6 WCDMA 22W NI780HS
MRF6S19100HSR3: Transistors RF MOSFET Power HV6 WCDMA 22W NI780HS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 1.93 GHz to 1.99 GHz | Gain : | 16.1 dB | ||
Output Power : | 22 W | Drain-Source Breakdown Voltage : | 68 V | ||
Gate-Source Breakdown Voltage : | - 0.5 V, + 12 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-780S-3 | Packaging : | Reel |
Rating |
Symbol |
Value |
Unit |
Drain−Source Voltage |
VDSS |
−0.5, +68 |
Vdc |
Gate−Source Voltage |
VGS |
−0.5, +12 |
Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
398 2.3 |
W W/°C |
Storage Temperature Range |
Tstg |
−65 to +150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |
CW Operation |
CW |
100 |
W |
Technical/Catalog Information | MRF6S19100HSR3 |
Vendor | Freescale Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 28V |
Current Rating | 900mA |
Package / Case | NI-780S |
Packaging | Tape & Reel (TR) |
Drawing Number | 375; 465A-06 ; HSR; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF6S19100HSR3 MRF6S19100HSR3 |