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MRF6S18060MBR1

ApplicationGSM Application• Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz) Power Gain — 15 dB Drain Efficiency - 50% GSM EDGE Application• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pou...

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MRF6S18060MBR1: ApplicationGSM Application• Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz) Power Gain — 15 dB Drain Efficien...

MRF6S18060MBR1 Data Sheet

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Part Number:
MRF6S18060MBR1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

GSM Application
• Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts
   CW, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)
   Power Gain — 15 dB
   Drain Efficiency - 50%
   GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA,
   Pout = 25 Watts Avg., Full Frequency Band (1805-1880 MHz or
   1930-1990 MHz)
   Power Gain — 15.5 dB
   Spectral Regrowth @ 400 kHz Offset = -62 dBc
   Spectral Regrowth @ 600 kHz Offset = -76 dBc EVM — 2% rms
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N-Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.


Pinout

Connection Diagram




Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 216
1.2		 W
W/°C
Storage Temperature Range Tstg - 65 to +175 °C
Operating Junction Temperature TJ 200 °C



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