MRF9002R2

Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25 PD 4 Watts Storage Temperature Range Tstg - 65 to +150 Operating Junction Temperature TJ 150 Description...

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SeekIC No. : 004427064 Detail

MRF9002R2: Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25 PD 4 Watts Sto...

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Part Number:
MRF9002R2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS - 0.5, +15 Vdc
Total Dissipation Per Transistor @ TC = 25
PD 4 Watts
Storage Temperature Range Tstg - 65 to +150
Operating Junction Temperature TJ 150



Description

MRF9002R2 is Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large - signal, common-source amplifier applications in 26 volt base station equipment. The device is in a PFP-16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
MRF9002R2 features

• Typical Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50%
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.




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