Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25 PD 4 Watts Storage Temperature Range Tstg - 65 to +150 Operating Junction Temperature TJ 150 Description...
MRF9002R2: Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25 PD 4 Watts Sto...
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Features: • High CurrentGain - Bandwidth Product• Low Noise Figure @ f = 1.0 GHz - NF(...
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | 65 | Vdc |
Gate-Source Voltage | VGS | - 0.5, +15 | Vdc |
Total Dissipation Per Transistor @ TC = 25 |
PD | 4 | Watts |
Storage Temperature Range | Tstg | - 65 to +150 |
|
Operating Junction Temperature | TJ | 150 |
MRF9002R2 is Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large - signal, common-source amplifier applications in 26 volt base station equipment. The device is in a PFP-16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
MRF9002R2 features
• Typical Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50%
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.