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MRF9002RS

Features: • Typical Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50%• Designed for Maximum Gain and Insertion Phase Flatness• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power• Excellent Therm...

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SeekIC No. : 004427065 Detail

MRF9002RS: Features: • Typical Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50%• Designed for Maximum Gain and Insertion Phase FlatnessR...

MRF9002RS Data Sheet

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Part Number:
MRF9002RS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Description



Features:

• Typical Performance at 960 MHz, 26 Volts
     Output Power - 2 Watts Per Transistor
     Power Gain - 18 dB
     Efficiency - 50%
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
DrainSource Voltage VDSS 65 Vdc
GateSource Voltage VGS -0.5, +15 Vdc
Total Dissipation Per Transistor @ TC = 25°C PD 4 Watts
W/°C
Storage Temperature Range Tstg −65 to +150 °C
Operating Junction Temperature TJ 150 °C



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