Features: • Typical Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50%• Designed for Maximum Gain and Insertion Phase Flatness• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power• Excellent Therm...
MRF9002RS: Features: • Typical Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50%• Designed for Maximum Gain and Insertion Phase FlatnessR...
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Features: • High CurrentGain - Bandwidth Product• Low Noise Figure @ f = 1.0 GHz - NF(...
Rating | Symbol | Value | Unit |
DrainSource Voltage | VDSS | 65 | Vdc |
GateSource Voltage | VGS | -0.5, +15 | Vdc |
Total Dissipation Per Transistor @ TC = 25°C | PD | 4 | Watts W/°C |
Storage Temperature Range | Tstg | −65 to +150 | °C |
Operating Junction Temperature | TJ | 150 | °C |