MRF6VP41KHR5

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Package / Case : NI-1230
Drain-Source Breakdown Voltage : 110 V
Configuration : Dual Common Source
Gate-Source Breakdown Voltage : - 6 V, 10 V


Pinout






Description

The MRF7S19100NBR1 is one kind of the 10-450 MHz, 1000 W, 50 V lateral N-channel RF power MOSFETs that designed for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Features of the MRF7S19100NBR1 are:(1)qualified up to a maximum of 50 VDD operation; (2)characterized with series equivalent large-signal impedance parameters; (3)excellent thermal stability; (4)integrated esd protection; (5)designed for push-pull operation; (6)greater negative gate-source voltage range for improved class C operation; (7)rohs compliant; (8)in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel..

The absolute maximum ratings of the MRF7S19100NBR1 can be summarized as:(1)drain-source voltage:-0.5 to +110 Vdc;(2)gate-source voltage:-6 to +10 Vdc;(3)storage temperature range:-65 to +150 °C;(4)operating junction temperature:200 °C;(5)case operating temperature:150 °C.If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .