MRF6V2010NBR

The MRF6V2010NBR is one kind of 10-450 MHz, 10 W, 50 V lateral N-channel  broadband RF power MOSFETs that designed for CW large-signal output and driver applications with frequencies up to 450 MHz. Also this device is unmatched and are suitable for use in industrial, medical and scientific applications.

Features of the MRF6V2010NBR are:(1)TO-272-2 in tape and reel. R1 suffix = 500 units per 44 mm,13 inch reel;(2)TO-270-2 in tape and reel. R1 suffix = 500 units per 24 mm,13 inch reel;(3)RoHS compliant;(4)200°C capable plastic package;(5)facilitates manual gain control, ALC and modulation techniques;(6)excellent thermal stability;(7)integrated ESD protection.

The absolute maximum ratings of the MRF6V2010NBR can be summarized as:(1)drain-source voltage:-0.5 to +110 Vdc;(2)gate-source voltage:-0.5 to +10 Vdc;(3)storage temperature range:-65 to +150 °C;(4)operating junction temperature:200 °C. If you want to know more information such as the electrical characteristics about the MRF6V2010NBR, please download the datasheet in www.seekic.com or www.chinaicmart.com .