MRF9080R3 Selling Leads, Price trend, MRF9080R3 DataSheet download, circuit diagram from SeekIC.com

Features: • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55%• Internally Matched, Controlled Q, for Ease of Use• High Gain, High Efficiency and High Linearity• Integrated ESD Pr...

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SeekIC No. : 004427078 Detail

MRF9080R3: Features: • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55%• Internally Matched, Control...

MRF9080R3 Data Sheet

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Part Number:: MRF9080R3
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/26

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Product Details

Description

Features:

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
        Output Power @ P1db: 75 Watts
        Power Gain @ P1db: 18.5 dB
        Efficiency @ P1db: 55%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.

Specifications

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	65	Vdc
Gate-Source Voltage	V_GS	- 0.5, +15	Vdc
Total Device Dissipation @ TC = 25 Derate above 25	P_D	250 1.43	Watts W/
Storage Temperature Range	T_stg	- 65 to +200
Operating Junction Temperature	T_J	200

Description

MRF9080R3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.

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MRF9080R3

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