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MRF9080SR3

Features: • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55%• Internally Matched, Controlled Q, for Ease of Use• High Gain, High Efficiency and High Linearity• Integrated ESD Pr...

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SeekIC No. : 004427080 Detail

MRF9080SR3: Features: • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55%• Internally Matched, Control...

MRF9080SR3 Data Sheet

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Part Number:
MRF9080SR3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
        Output Power @ P1db: 75 Watts
        Power Gain @ P1db: 18.5 dB
        Efficiency @ P1db: 55%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.



Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25
Derate above 25		 PD 250
1.43		 Watts
W/
Storage Temperature Range Tstg - 65 to +200
Operating Junction Temperature TJ 200



Description

MRF9080SR3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.


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