Transistors RF MOSFET Power HV6 2.7GHZ 15W
MRF6S27015NR1: Transistors RF MOSFET Power HV6 2.7GHZ 15W
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Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 68 V | Gate-Source Breakdown Voltage : | - 0.5 V, 12 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-270 |
Packaging : | Reel |
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | -0.5, +68 | Vdc |
Gate-Source Voltage | VGS | -0.5, +12 | Vdc |
Storage Temperature Range | Tstg | -65 to +175 | °C |
Operating Junction Temperature(1,2) | TJ | 200 | °C |
MRF6S27015NR1 is Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain - 14 dB Drain Efficiency - 22% ACPR @ 5 MHz Offset - -45 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW Output Power