Transistors RF MOSFET Power HV7 1.9GHZ 28V
MRF7S19080HSR3: Transistors RF MOSFET Power HV7 1.9GHZ 28V
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 65 V | Gate-Source Breakdown Voltage : | - 6 V, 10 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-780S |
Packaging : | Reel |
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | -0.5, +65 | Vdc |
Gate-Source Voltage | VGS | -6.0, +10 | Vdc |
Operating Voltage | VDD | 32, +0 | Vdc |
Storage Temperature Range | Tstg | -65 to +150 | °C |
Case Operating Temperature | TC | 150 | °C |
Operating Junction Temperature(1,2) | TJ | 200 | °C |
MRF7S19080HSR3 is Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/cellular radio applications.
Technical/Catalog Information | MRF7S19080HSR3 |
Vendor | Freescale Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 28V |
Current Rating | 750mA |
Package / Case | NI-780S |
Packaging | Tape & Reel (TR) |
Drawing Number | 375; 465A-06 ; HSR; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF7S19080HSR3 MRF7S19080HSR3 |