MRF6S18140HR

The MRF6S18140HR is one kind of 1805-1880 MHz, 29 W AVG., 28 V 2 x N-CDMA lateral N-channel broadband RF power MOSFETs that designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. This device can be used in TDMA, CDMA and multicarrier amplifier applications and Class AB fo r PCN - PCS/cel lular radi o and WLL applications.

Features of the MRF6S18140HR are:(1)in tape and reel. R3 suffix = 250 units per 56 mm, 13 inch reel;(2)RoHS compliant;(3)low gold plating thickness on leads, 40 nominal;(4)designed for lower memory effects and wide instantaneous bandwidth applications;(5)lower thermal resistance package;(6)integr-ated ESD protection;(7)qualified up to a maximum of 32 VDD operation;(8)characterized with series equivalent large-signal impedance parameters;(9)internally matched for ease of use.

The absolute maximum ratings of the MRF6S18140HR can be summarized as:(1)drain-source voltage:-0.5 to +68 Vdc;(2)gate-source voltage:-0.5 to +12 Vdc;(3)storage temperature range:-65 to +150 °C;(4)operating junction temperature:225 °C;(5)case operating temperature:150°C. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .