MRF6S9045NR1

MOSFET RF N-CH 28V 10W TO-270-2

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MRF6S9045NR1 Picture
SeekIC No. : 003434781 Detail

MRF6S9045NR1: MOSFET RF N-CH 28V 10W TO-270-2

floor Price/Ceiling Price

US $ 10.55~10.55 / Piece | Get Latest Price
Part Number:
MRF6S9045NR1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • Unit Price
  • $10.55
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Series: - Manufacturer: Freescale Semiconductor
Continuous Collector Current : 5 mA Transistor Type: LDMOS
Frequency: 880MHz Gain: 22.7dB
Voltage - Test: 28V Current Rating: 10µA
Noise Figure: - Current - Test: 350mA
Power - Output: 10W Voltage - Rated: 68V
Package / Case: TO-270AA Supplier Device Package: TO-270-2    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Voltage - Test: 28V
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Voltage - Rated: 68V
Package / Case: TO-270AA
Supplier Device Package: TO-270-2
Power - Output: 10W
Frequency: 880MHz
Current - Test: 350mA
Gain: 22.7dB


Features:

Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain ó 22.7 dB Drain Efficiency ó 32% ACPR @ 750 kHz Offset ó -47 dBc @ 30 kHz Bandwidth



Application

Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (921-960 MHz) Power Gain ó 20 dB Drain Efficiency ó 46% Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM ó 1.5% rms

Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,Full Frequency Band (921-960 MHz) Power Gain ó 20 dB Drain Efficiency ó 68%
Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200°C Capable Plastic Package
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.




Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 175
1.0
W
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C



Description

MRF6S9045NR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amplifier applications in 28 volt base station equipment.




Parameters:

Technical/Catalog InformationMRF6S9045NR1
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameTO-270-2
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Power Dissipation10.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusContains Lead
RoHS StatusRoHS Compliant
Other Names MRF6S9045NR1
MRF6S9045NR1



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