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MRF6P3300HR5

MOSFET RF N-CH 32V 300W NI-860C3

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SeekIC No. : 003434832 Detail

MRF6P3300HR5: MOSFET RF N-CH 32V 300W NI-860C3

MRF6P3300HR5 Data Sheet

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Part Number:
MRF6P3300HR5
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Series: - Continuous Collector Current : 5 mA
Manufacturer: Freescale Semiconductor Transistor Type: LDMOS
Frequency: 857MHz Gain: 20.2dB
Voltage - Test: 32V Current Rating: 10µA
Noise Figure: - Current - Test: 1.6A
Power - Output: 320W Voltage - Rated: 68V
Package / Case: NI-860C3 Supplier Device Package: NI-860C3    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Voltage - Test: 32V
Current - Test: 1.6A
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Voltage - Rated: 68V
Gain: 20.2dB
Package / Case: NI-860C3
Supplier Device Package: NI-860C3
Frequency: 857MHz
Power - Output: 320W


Features:

Typical Narrowband Two-Tone Performance @ 860 MHz: VDD = 32 Volts,IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain ó 20.2 dB Drain Efficiency ó 44.1% IMD ó -30.8 dBc
Typical Narrowband DVBT OFDM Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QAM Power Gain ó 20.4 dB Drain Efficiency ó 29% ACPR @ 3.9 MHz Offset ó -57 dBc @ 20 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Designed for Push-Pull Operation Only
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40µ Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.




Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Drain-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 761
4.3		 W
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C



Description

MRF6P3300HR5 is Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 32 volt analog or digital television transmitter equipment.




Parameters:

Technical/Catalog InformationMRF6P3300HR5
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 32V
Current Rating2.4A
Package / CaseNI-860C3
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6P3300HR5
MRF6P3300HR5



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